Noise and Equivalent Circuit of Double Injection
TL;DR: In this article, a new interpretation of Nyquist noise with α≡1 in these devices at high frequencies was proposed, which is in accord with an equivalent circuit derived for the double-injection process.
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Abstract: Measurements of the high‐frequency noise of a silicon double‐injection diode result in 〈i^2〉 = α⋅4kT(1/r)Δf with α=1.04 and in agreement with the literature. A new interpretation demands Nyquist noise with α≡1 in these devices at high frequencies. This is in accord with an equivalent circuit derived for the double‐injection process. Speculations are made on the general validity of Nyquist noise in nonlinear devices at high frequencies. In addition, generation‐recombination noise is suggested as the prime source of the low‐frequency noise.
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Figures
FIG. 6. Imaginary part of the diode admittance vs frequency. The solid lines are !east-squares fits to the data. The fitting function is that derived from the equivalent circuit of Fig. 4 after subtraction of wC = Im ( Y) !-=· 
TABLE I. Values of the parameters for the equivalent circuit of Fig. 4 for the double-injection· diode of Fig. 3. 
FIG. 7. Noise power spectra at six operating points (see Fig. 3). The solid lines are least-squares fits of I • ., =c1+c2ff'• to the data. The insert displays data and fits above 1 MHz. 
FIG. 8. High-frequency equivalent noise current IeQ vs highfrequency conductance g= 1jr. The ratio of the slope of the solid line (least-squares fit) to the slope of the dashed theoretical line (2kT/q) is a= 1.04±0.05. 
FIG. 9. Observed excess noise at 100kHz vs diode current at four operating points. The slope is close to 2. I eq is the equivalent noise current obtained at 100 kHz from the dependence leq=c,+C<J'!P when least-squares fitted to the experimental points of Fig. 7.
Citations
Noise sources in transport equations associated with ambipolar diffusion and Shockley-Read recombination
TL;DR: In this paper, a discussion of the noise sources which enter into the stochastic transport equations which govern carrier flow in SCL diodes and ordinary junction devices is presented.
54
G-R noise and admittance of double injection diodes
TL;DR: In this article, a theoretical description of generation-recombination (g-r) noise and small-signal admittance of double injection diodes is given, and analytical expressions are found for each of three characteristic operating regimes.
16
Growth of raspberry-, prism- and flower-like ZnO particles using template-free low-temperature hydrothermal method and their application as humidity sensors
Edit Pál,Viktória Hornok,Robert Kun,Vladimir Chernyshev,Torben Seemann,Imre Dékány,Matthias Busse,Matthias Busse +7 more
TL;DR: In this paper, the absolute impedance of Raspberry-, prism-and flower-like ZnO particles was found to be strong dependent on the morphology, and the space-charge-limited conductivity transport mechanism was proved by the oscillatory behaviour of impedance.
14
Chapter 4 Double Injection in Semiconductors
R. Baron,J.W. Mayer +1 more
TL;DR: This chapter presents a review that is primarily concerned with the development of double injection that occurred after 1963, when the details of the framework were being filled in during this period, and the first quantitative experimental verification of the long structure regimes was obtained.
12
Thermal noise in double injection
D. H. Lee,M. A. Nicolet +1 more
TL;DR: In this article, a double-injection silicon diode as a function of operating point was investigated and the results indicated that at high frequencies, the noise increases linearly with temperature and depends linearly on the differential conductance g at the same frequency.
References
Comparative Anatomy of Models for Double Injection of Electrons and Holes into Solids
TL;DR: In this article, several models for double injection of electrons and holes into solids are shown to fall into three groups: field dominated, diffusion dominated, and hybrid models, and solutions for the currentvoltage relations are ob...
70
Effects of Diffusion and Thermal Generation on Double Injection in Semiconductors
TL;DR: The theoretical treatment of the double-injection semiconductor regime has been extended to include first diffusion and then both diffusion and thermal generation, and the results parallel earlier results for the insulator regime as discussed by the authors.
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Noise in double‐injection space‐charge‐limited diodes
TL;DR: In this paper, it was shown that the conductance g of a double-injection Ge diode shows transit time effects and that the limiting noise can be represented by a current generator (4kTgΔf)1/2 in parallel to the device.
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Transient Response of Double Injection in a Semiconductor of Finite Cross Section
TL;DR: In this article, the transient response of the current to an applied voltage step is analyzed for a structure exhibiting double-injection behavior, subject to the condition that both initial and final states are describable by the same double injection regime.
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