Journal Article10.1038/386351A0
Nitride-based semiconductors for blue and green light-emitting devices
Fernando Ponce,David P. Bour +1 more
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TL;DR: In this article, the group III elements of the semiconducting nitrides have been used for the fabrication of high-efficiency solid-state devices that emit green and blue light.
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Abstract: Recent advances in fabrication technologies for the semiconducting nitrides of the group III elements have led to commercially available, high-efficiency solid-state devices that emit green and blue light Light-emitting diodes based on these materials should find applications in flat-panel displays, and blue and ultraviolet laser diodes promise high-density optical data storage and high-resolution printing
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Citations
Structural, electronic and vibrational properties of small Ga(x)N(y) (x+y = 2-5) nanoclusters: a B3LYP-DFT study.
TL;DR: An ab initio study of the stability, structural and electronic properties of the gallium nitride nanoclusters, Ga(x)N(y) (x+y = 2-5), finding the configuration possessing the maximum value of binding energy (BE) to be the most stable structure.
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Chemical synthesis of hexagonal indium nitride nanocrystallines at low temperature
Liangbiao Wang,Qianli Shen,Dejian Zhao,Juanjuan Lu,Weiqiao Liu,Junhao Zhang,Keyan Bao,Quanfa Zhou +7 more
TL;DR: In this article, hexagonal indium nitride nanocystallines with high crystallinity have been prepared by the reaction of InCl 3 ·4H 2 O, sulfur and NaNH 2 in an autoclave at 160°C.
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Cathodoluminescence and Cross-sectional Transmission Electron Microscopy Studies for Deformation Behaviors of GaN Thin Films Under Berkovich Nanoindentation.
TL;DR: In this paper, the authors investigated the Berkovich nanoindentation-induced mechanical deformation mechanisms of metal-organic chemical-vapor deposition-derived GaN thin films with the aid of cathodoluminescence (CL) and the cross-sectional transmission electron microscopy (XTEM) techniques.
InGaN/GaN multi-quantum dot light-emitting diodes
TL;DR: In this article, it was demonstrated that InGaN/GaN blue light-emitting diodes (LEDs) with multiple quantum dot (MQD) were successfully fabricated by metal-organic chemical vapor deposition.
Assessment of dislocation reduction on 100 mm diameter bulk GaN grown by the NEAT method
01 Mar 2022
TL;DR: X-ray topography measurements on a 100 mm diameter GaN boule grown by the Near Equilibrium AmmonoThermal method revealed an improvement in dislocation density from >1 × 10 6 cm −2 to between 2 ×10 5 and 5 × 10 5 cm − 2 , an improvement greater than two to five times from seed to growth as mentioned in this paper .
4
References
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
Abstract: Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes(LEDs) with the luminous intensity over 1 cd were fabricated As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs The typical output power was 1500 μW and the external quantum efficiency was as high as 27% at a forward current of 20 mA at room temperature The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively This value of luminous intensity was the highest ever reported for blue LEDs
3.8K
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TL;DR: In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.
2.7K
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto +7 more
TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
TL;DR: In this article, the growth condition dependence of crystalline quality is also studied, and the narrowest x-ray rocking curve from the (0006) plane is 2.70' and from the 2024 plane is 1.86' on sapphire substrates.
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P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
TL;DR: In this article, the p-n junction LED using Mg-doped GaN treated with low-energy electron-beam irradiation (LEEBI) was reported for the first time.
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