Journal Article10.1038/386351A0
Nitride-based semiconductors for blue and green light-emitting devices
Fernando Ponce,David P. Bour +1 more
1.6K
TL;DR: In this article, the group III elements of the semiconducting nitrides have been used for the fabrication of high-efficiency solid-state devices that emit green and blue light.
read more
Abstract: Recent advances in fabrication technologies for the semiconducting nitrides of the group III elements have led to commercially available, high-efficiency solid-state devices that emit green and blue light Light-emitting diodes based on these materials should find applications in flat-panel displays, and blue and ultraviolet laser diodes promise high-density optical data storage and high-resolution printing
read more
Chat with Paper
AI Agents for this Paper
Find similar papers on Google Scholar, PubMed and Arxiv
Write a critical review of this paper
Analyze citations of this paper to find unaddressed research gaps
Citations
Improved Performance of InGaN/AlGaN Multiple‐Quantum‐Well Near‐UV Light‐Emitting Diodes with Convex Barriers and Staggered Wells
Lie Cai,Chao-Zhi Xu,Haoyang Lin,Jin-Jian Zheng,Zai-jun Cheng,F.B. Xiong,P. Ren,Zhi Chao Chen +7 more
TL;DR: In this paper , the physical mechanism of improving the photoelectric performance of InGaN/AlGaN-based near UV light-emitting diode (LED) with convex quantum barrier and staggered quantum well (QW) is studied by numerical simulation.
6
Structural, luminescence, energy transfer mechanism, and photometric properties of Sm3+ -doped KYBO phosphors
TL;DR: In this article , the structural and optical properties of Potassium yttrium borate (KY(1-x)SmxBO3) referred as KYBO:Sm3+ phosphors with the varying of Sm3+ ions were systematically investigated via X-ray diffractometer (XRD), excitation (PLE), emission spectra, and decay curves.
6
Enhanced Optical Output Power of Tunnel Junction GaN-Based Light Emitting Diodes with Transparent Conducting Al and Ga-Codoped ZnO Thin Films
TL;DR: In this article, high quality Al and Ga-codoped ZnO (AGZO) thin films were successfully deposited both on sapphire substrates and GaN-based light emitting diodes (LED) with a tunnel junction (TJ) layer by using the radio frequency magnetron sputtering technique at room temperature.
6
Bandgap trimming and optical properties of Si3N4:Al microbelt phosphors for warm white light-emitting diodes
TL;DR: Si3N4:Al microbelts with tunable bandgap energy and resultant yellow-orange phosphors are prepared through a facile direct nitridation method as mentioned in this paper, and they display a wide emission ranging from 500 to 800 nm when excited by a 450 nm blue LED light source.
6
Light-material interfaces for self-powered optoelectronics
Jung Ho Shin,Young-bin Kim,Jung-Hwan Park,Jin Soo Lee,Sang Hyun Park,Seung Hyung Lee,Jae Hee Lee,Keon Jae Lee +7 more
TL;DR: In this article, the authors introduce light-material interface (LMI) technologies including nanowelding, laser lift-off, physical interlocking, and interfacial chemistry that can overcome the inherent thermal limit to realize inorganic-based self-powered wearable optoelectronic devices.
6
References
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
Abstract: Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes(LEDs) with the luminous intensity over 1 cd were fabricated As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs The typical output power was 1500 μW and the external quantum efficiency was as high as 27% at a forward current of 20 mA at room temperature The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively This value of luminous intensity was the highest ever reported for blue LEDs
3.8K
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TL;DR: In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.
2.7K
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto +7 more
TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
2.5K
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
TL;DR: In this article, the growth condition dependence of crystalline quality is also studied, and the narrowest x-ray rocking curve from the (0006) plane is 2.70' and from the 2024 plane is 1.86' on sapphire substrates.
2.2K
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
TL;DR: In this article, the p-n junction LED using Mg-doped GaN treated with low-energy electron-beam irradiation (LEEBI) was reported for the first time.
2K