Journal Article10.1038/386351A0
Nitride-based semiconductors for blue and green light-emitting devices
Fernando Ponce,David P. Bour +1 more
1.6K
TL;DR: In this article, the group III elements of the semiconducting nitrides have been used for the fabrication of high-efficiency solid-state devices that emit green and blue light.
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Abstract: Recent advances in fabrication technologies for the semiconducting nitrides of the group III elements have led to commercially available, high-efficiency solid-state devices that emit green and blue light Light-emitting diodes based on these materials should find applications in flat-panel displays, and blue and ultraviolet laser diodes promise high-density optical data storage and high-resolution printing
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Citations
•Dissertation
Filmes nanométricos de FeN e ALN crescidos por sputtering e aplicações do efeito peltier
José Américo de Sousa Moura
- 17 Dec 2010
TL;DR: In this article, the capability of the reactive/nonreactive sputtering (dc/rf) technique at low power for the growth of nanometric thin films from magnetic materials (FeN) and widegap semiconductors (AlN), as well as the technological application of the Peltier effect using commercial modules of bismuth telluride (Bi2Te3).
Enhancement of red emission intensity of Ca2Al2SiO7:Eu3+ phosphor by MoO3 doping or excess SiO2 addition for application to white LEDs
H Y Jiao,C R LiMao,Q Chen,P Y Wang,R C Cai +4 more
- 01 Jan 2018
TL;DR: In this article, X-ray powder diffraction, excitation and emission spectra were used to investigate the structure and photoluminescence properties of the obtained phosphors.
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First-principles calculations of structure and high pressure phase transition in gallium nitride
TL;DR: In this paper, the phase transitions of semiconductor GaN from the Wurtzite (WZ) structure and the zinc-blende (ZB) structure to the rocksalt (RS) structure were investigated by using the first-principles plane-wave pseudopotential density functional method combined with the ultrasoft pseudopoetic scheme in the generalized gradient approximation (GGA) correction.
7
Non-radiative and radiative properties of PLD-deposited polycrystalline GaN studied by UV ps-to-ns laser pulses
M. Niehus,P. Sanguino,R. Schwarz,Alexander Fedorov,José M. G. Martinho,M.J. Soares,Teresa Monteiro,F. Wunsch,M. Kunst +8 more
TL;DR: In this paper, short laser pulses with a minimal pulse width of 5 ps were applied to study the nonradiative and radiative carrier density decay in polycrystalline GaN.
7
References
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
Abstract: Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes(LEDs) with the luminous intensity over 1 cd were fabricated As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs The typical output power was 1500 μW and the external quantum efficiency was as high as 27% at a forward current of 20 mA at room temperature The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively This value of luminous intensity was the highest ever reported for blue LEDs
3.8K
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TL;DR: In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.
2.7K
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto +7 more
TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
2.5K
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
TL;DR: In this article, the growth condition dependence of crystalline quality is also studied, and the narrowest x-ray rocking curve from the (0006) plane is 2.70' and from the 2024 plane is 1.86' on sapphire substrates.
2.2K
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
TL;DR: In this article, the p-n junction LED using Mg-doped GaN treated with low-energy electron-beam irradiation (LEEBI) was reported for the first time.
2K