Journal Article10.1038/386351A0
Nitride-based semiconductors for blue and green light-emitting devices
Fernando Ponce,David P. Bour +1 more
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TL;DR: In this article, the group III elements of the semiconducting nitrides have been used for the fabrication of high-efficiency solid-state devices that emit green and blue light.
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Abstract: Recent advances in fabrication technologies for the semiconducting nitrides of the group III elements have led to commercially available, high-efficiency solid-state devices that emit green and blue light Light-emitting diodes based on these materials should find applications in flat-panel displays, and blue and ultraviolet laser diodes promise high-density optical data storage and high-resolution printing
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Citations
Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells
H. Condori Quispe,S. M. Islam,Samuel James Bader,Ashish Chanana,Kevin Lee,Reet Chaudhuri,Ajay Nahata,Huili Grace Xing,Debdeep Jena,Berardi Sensale-Rodriguez +9 more
TL;DR: In this paper, a terahertz and far-infrared spectroscopy approach was used for the study of bilayer charge systems with large differences in transport properties between layers, such as quantum wells in III-Nitride semiconductors.
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Designing gallium nitride slot waveguide operating within visible band
TL;DR: In this article, the authors investigated the transmission loss of gallium nitride slot waveguide by numerical simulation and showed that the gallium-nide-slot waveguide could operate within visible band (400-800 nm) with loss coefficient of 0.4-1.0 dB/cm due to material absorption.
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Comparison of morphology, structure and optical properties of GaN powders prepared by Ga2O3 nitridation and gallium nitridation
Xionghui Zeng,Baixiang Han,Xiaodan Wang,Jianping Shi,Yu Xu,Jicai Zhang,Jianfeng Wang,Jinping Zhang,Ke Xu +8 more
TL;DR: In this paper, two kinds of GaN powders were grown using the chemical vapor transport process, which involved different Ga sources, i.e., Ga2O3 and Ga metal.
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Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure
H. Ben Ammar,Albert Minj,Piero Gamarra,Cedric Lacam,M. Tordjman,M.A. di Forte-Poisson,Magali Morales,M. P. Chauvat,Pierre Ruterana +8 more
TL;DR: In this article, the authors investigated the nonintentional incorporation of gallium in InAlN layers grown by metal organic vapor phase epitaxy (MOVPE) using two reactors.
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References
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
Abstract: Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes(LEDs) with the luminous intensity over 1 cd were fabricated As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs The typical output power was 1500 μW and the external quantum efficiency was as high as 27% at a forward current of 20 mA at room temperature The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively This value of luminous intensity was the highest ever reported for blue LEDs
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Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TL;DR: In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.
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InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto +7 more
TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
TL;DR: In this article, the growth condition dependence of crystalline quality is also studied, and the narrowest x-ray rocking curve from the (0006) plane is 2.70' and from the 2024 plane is 1.86' on sapphire substrates.
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P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
TL;DR: In this article, the p-n junction LED using Mg-doped GaN treated with low-energy electron-beam irradiation (LEEBI) was reported for the first time.
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