Journal Article10.1038/386351A0
Nitride-based semiconductors for blue and green light-emitting devices
Fernando Ponce,David P. Bour +1 more
1.6K
TL;DR: In this article, the group III elements of the semiconducting nitrides have been used for the fabrication of high-efficiency solid-state devices that emit green and blue light.
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Abstract: Recent advances in fabrication technologies for the semiconducting nitrides of the group III elements have led to commercially available, high-efficiency solid-state devices that emit green and blue light Light-emitting diodes based on these materials should find applications in flat-panel displays, and blue and ultraviolet laser diodes promise high-density optical data storage and high-resolution printing
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Citations
Atomistic analysis of piezoelectric potential fluctuations in zinc-blende InGaN/GaN quantum wells: A Stillinger-Weber potential based analysis
TL;DR: Sustainable Energy Authority of Ireland and Science Foundation Ireland (Grants No. 17/CDA/4789 and No. 12/RC/2276 P2) as discussed by the authors.
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Conversion Efficiency Improvement of InGaN/GaN Multiple-Quantum-Well Solar Cells With Ex Situ AlN Nucleation Layer
TL;DR: In this article, the crystal quality, electrical, and optical characteristics of GaN solar cells (SCs) were improved using ex situ AlN nucleation layer, which reduced the total dislocation density from $3.7 \times 10^{8}$ to $2.2
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•Dissertation
Packaging designs for ultraviolet light emitting diodes
Yishak Habtemichael
- 14 Aug 2012
TL;DR: In this article, the authors acknowledge God for His many blessings in bringing me to this point of achievement in my life and acknowledge the members of the EMRL group for their support and friendship.
Hydroalumination Reactions on Acetylenes and Nitriles in the Synthesis of Carbaalanes and Imidoalanes
TL;DR: The simple way of carrying out the hydroalumination reactions on acetylenes and nitriles in the synthesis of carbaalane and imidoalane cluster compounds is addressed.
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Giant growth-plane optical anisotropy in wurtzite InN/GaN disk-in-wire structures
TL;DR: In this paper, a combination of valence force-field molecular mechanics, 20-band sp3d5s∗ atomistic tight-binding approach, and appropriate post-processing tools was used to study the origin and nature of optical polarization anisotropy in semiconducting GaN/InN/GaN disk-in-wire structures having wurtzite crystal symmetry and varying InN disk thicknesses.
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References
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
Abstract: Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes(LEDs) with the luminous intensity over 1 cd were fabricated As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs The typical output power was 1500 μW and the external quantum efficiency was as high as 27% at a forward current of 20 mA at room temperature The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively This value of luminous intensity was the highest ever reported for blue LEDs
3.8K
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TL;DR: In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.
2.7K
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto +7 more
TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
2.5K
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
TL;DR: In this article, the growth condition dependence of crystalline quality is also studied, and the narrowest x-ray rocking curve from the (0006) plane is 2.70' and from the 2024 plane is 1.86' on sapphire substrates.
2.2K
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
TL;DR: In this article, the p-n junction LED using Mg-doped GaN treated with low-energy electron-beam irradiation (LEEBI) was reported for the first time.
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