Journal Article10.1038/386351A0
Nitride-based semiconductors for blue and green light-emitting devices
Fernando Ponce,David P. Bour +1 more
1.6K
TL;DR: In this article, the group III elements of the semiconducting nitrides have been used for the fabrication of high-efficiency solid-state devices that emit green and blue light.
read more
Abstract: Recent advances in fabrication technologies for the semiconducting nitrides of the group III elements have led to commercially available, high-efficiency solid-state devices that emit green and blue light Light-emitting diodes based on these materials should find applications in flat-panel displays, and blue and ultraviolet laser diodes promise high-density optical data storage and high-resolution printing
read more
Chat with Paper
AI Agents for this Paper
Find similar papers on Google Scholar, PubMed and Arxiv
Write a critical review of this paper
Analyze citations of this paper to find unaddressed research gaps
Citations
Electron localization and emission mechanism in wurtzite (Al, In, Ga)N alloys
TL;DR: In this article, the electronic structures of wurtzite InGaN and AlGaN alloys were investigated using the first-principle density functional theory calculation, and it was shown that the electrons at the top of valence bands can be effectively localized in the vicinity of the In-N-In zigzag chains (weak localization) and the InN atomic condensates (strong localization).
18
Ultrahigh vacuum arcjet nitrogen source for selected energy epitaxy of group iii nitrides by molecular beam epitaxy
Frank J. Grunthaner,R. Bicknell-Tassius,P. W. Deelman,P. J. Grunthaner,C. E. Bryson,E. Snyder,J. L. Giuliani,J. P. Apruzese,P. Kepple +8 more
TL;DR: In this paper, an ultrahigh vacuum-compatible arcjet source which uses an electric arc to thermally dissociate N2 has been proposed for the growth of molecular beam epitaxial (MBE) growth of group III nitrogen.
18
Precession electron diffraction-assisted crystal phase mapping of metastable c-GaN films grown on (001) GaAs.
Francisco Ruiz-Zepeda,Y. L. Casallas-Moreno,Jesus Cantu-Valle,Diego Alducin,Ulises Santiago,Miguel Jose-Yacaman,Máximo López-López,Arturo Ponce +7 more
TL;DR: The findings show the advantage of using PED along with phase and orientation mapping, and the analysis can be extended to differently composed semiconductor thin films.
18
Optimum performance of electron beam pumped GaAs and GaN
TL;DR: In this article, a physical solution to overcome the damage to semiconductors, due to increasing temperature during the pumping process, is introduced, using quantum hydrodynamic fluid equations, including different quantum effects.
18
Catalyst-free growth of InAs|[sol]|InxGa1|[minus]|xAs coaxial nanorod heterostructures on graphene layers using molecular beam epitaxy
TL;DR: In this paper, the growth of InAs/InxGa1−xAs coaxial nanorod heterostructures on large-area graphene layers using molecular beam epitaxy was investigated using in situ reflection high-energy electron diffraction.
References
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
Abstract: Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes(LEDs) with the luminous intensity over 1 cd were fabricated As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs The typical output power was 1500 μW and the external quantum efficiency was as high as 27% at a forward current of 20 mA at room temperature The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively This value of luminous intensity was the highest ever reported for blue LEDs
3.8K
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TL;DR: In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.
2.7K
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto +7 more
TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
2.5K
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
TL;DR: In this article, the growth condition dependence of crystalline quality is also studied, and the narrowest x-ray rocking curve from the (0006) plane is 2.70' and from the 2024 plane is 1.86' on sapphire substrates.
2.2K
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
TL;DR: In this article, the p-n junction LED using Mg-doped GaN treated with low-energy electron-beam irradiation (LEEBI) was reported for the first time.
2K