Journal Article10.1016/S0257-8972(00)01001-X
New trends in PBII technology : industrial perspectives and limitations
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TL;DR: In this paper, the authors proposed a high voltage high current pulse generator for high voltage PBII processing, where the voltage at the primary is provided by transistor switches and where the energy is stored at a low voltage level.
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Abstract: The two general specifications required for plasma-based ion implantation are low pressure large size plasmas and high voltage high current pulse generators. Due to the wide ion sheath expansion (up to a few tens of cm), large volumes of plasma are mandatory around the substrate. Multipolar discharges, which produce a peripheral ionization facing the substrate and can be easily scaled up, are well suited to PBII processing and begin to be widely used. However, hot filaments to sustain plasmas of reactive gases in multipolar magnetic field structures must be ruled out in favor of distributed electron cyclotron resonance (DECR) plasma sources. In order to produce the high voltage high current pulses necessary for PBII processing, generators using pulse transformers, where the voltage at the primary is provided by transistor switches and where the energy is stored at a low voltage level, appear particularly well-adapted to fulfill most of the PBII requirements in terms of reliability, compactness, cost and safety. At the industrial level, a very great advantage of PBII over ion beam implantation lies in achieving sequential processing in the same reactor, such as cleaning, etching and deposition prior to, during, or after the implantation process. As examples, thermochemical processing can be performed via PBII with or without external independent heating. More generally, the combination of DECR plasmas and magnetron discharges in the same reactor opens new possibilities for complex treatments such as PBII/CVD (chemical vapor deposition) in DECR plasmas or PBII/PVD (physical vapor deposition) in hybrid DECR-magnetron reactors. However, the transfer of processes from the laboratory to industry is mainly limited to very specific and low energy applications. In fact, mass production using high voltage PBII processing requires production tools still under development. Due to huge secondary electron emission and sheath thickness above 100 kV pulse voltages, large volume reactors (a few cubic meters) on one hand, high power pulse supplies (100 kV–1000 A/100 MW) on the other hand, are mandatory for the rise of PBII at the industrial scale.
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Citations
From plasma immersion ion implantation to deposition: A historical perspective on principles and trends
TL;DR: Plasma immersion techniques of surface modification are known under a myriad of names as mentioned in this paper, ranging from pure plasma ion implantation, to ion implantations and deposition hybrid modes, to modes that are essentially plasma film deposition with substrate bias.
The corrosion behavior and hemocompatibility of TiNi alloys coated with DLC by plasma based ion implantation
Yan Cheng,Yufeng Zheng +1 more
TL;DR: In this paper, the influence of the pulsed negative bias voltage applied to the substrate from 12 eV to 40 eV on the surface characteristics and corrosion resistant property as well as hemocompatibility has been investigated.
Multi-dipolar plasmas for plasma-based ion implantation and plasma-based ion implantation and deposition
TL;DR: In this article, the authors proposed the use of distributed electron cyclotron resonance (DECR) plasma sources for plasma-based ion implantation (PBII) due to the difficulty of achieving constant amplitude standing wave patterns along linear microwave applicators in the meter range.
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Advances in High-Voltage Modulators for Applications in Pulsed Power and Plasma-Based Ion Implantation
TL;DR: In this paper, the authors describe how the pulsed power technology used originally in beam sources and cathodic arcs has converged to produce power sources for plasma-based ion implantation (PBII) and related technologies.
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Hybrid evaporation: Glow discharge source for plasma immersion ion implantation
TL;DR: In this paper, a quasiequilibrium evaporation-glow discharge (EGD) source was designed and investigated for plasma immersion ion implantation, and the important relationship between the pressure in the EVP chamber and the implantation chamber was studied for optimal performance.
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TL;DR: In this paper, a model for the propagation of the transient sheath during a pulse of high negative voltage applied to a conductor immersed in a plasma such as that present in plasma source ion implantation was developed.
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Microwave multipolar plasmas excited by distributed electron cyclotron resonance: concept and performance
TL;DR: Distributed electron cyclotron resonance (DECR) as mentioned in this paper is a new plasma excitation technique well adapted to microwave multipolar plasmas, based upon the use of several microwave linear applicators working at the ECR mode along the multipolar confinement magnets.
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Measurement of electron emission due to energetic ion bombardment in plasma source ion implantation
TL;DR: In this article, an experimental procedure was developed to measure electron emission due to energetic ion bombardment during plasma source ion implantation, where spherical targets of copper, stainless steel, graphite, titanium alloy and aluminum alloy were biased negatively to 20, 30, and 40 kV in argon and nitrogen plasmas.
139
Adherent diamond-like carbon coatings on metals via plasma source ion implantation
TL;DR: In this paper, a plasma source ion implantation (PSII) was used to create a carbon composition gradient in the surface of the ferrous material to serve as the interface for a diamond-like carbon (DLC) coating.