Nanoscale thermal transport
David G. Cahill,Wayne K. Ford,Kenneth E. Goodson,Gerald D. Mahan,Arun Majumdar,Humphrey J. Maris,Roberto Merlin,Simon R. Phillpot +7 more
TL;DR: A review of the literature on thermal transport in nanoscale devices can be found in this article, where the authors highlight the recent developments in experiment, theory and computation that have occurred in the past ten years and summarizes the present status of the field.
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Abstract: Rapid progress in the synthesis and processing of materials with structure on nanometer length scales has created a demand for greater scientific understanding of thermal transport in nanoscale devices, individual nanostructures, and nanostructured materials. This review emphasizes developments in experiment, theory, and computation that have occurred in the past ten years and summarizes the present status of the field. Interfaces between materials become increasingly important on small length scales. The thermal conductance of many solid–solid interfaces have been studied experimentally but the range of observed interface properties is much smaller than predicted by simple theory. Classical molecular dynamics simulations are emerging as a powerful tool for calculations of thermal conductance and phonon scattering, and may provide for a lively interplay of experiment and theory in the near term. Fundamental issues remain concerning the correct definitions of temperature in nonequilibrium nanoscale systems. Modern Si microelectronics are now firmly in the nanoscale regime—experiments have demonstrated that the close proximity of interfaces and the extremely small volume of heat dissipation strongly modifies thermal transport, thereby aggravating problems of thermal management. Microelectronic devices are too large to yield to atomic-level simulation in the foreseeable future and, therefore, calculations of thermal transport must rely on solutions of the Boltzmann transport equation; microscopic phonon scattering rates needed for predictive models are, even for Si, poorly known. Low-dimensional nanostructures, such as carbon nanotubes, are predicted to have novel transport properties; the first quantitative experiments of the thermal conductivity of nanotubes have recently been achieved using microfabricated measurement systems. Nanoscale porosity decreases the permittivity of amorphous dielectrics but porosity also strongly decreases the thermal conductivity. The promise of improved thermoelectric materials and problems of thermal management of optoelectronic devices have stimulated extensive studies of semiconductor superlattices; agreement between experiment and theory is generally poor. Advances in measurement methods, e.g., the 3ω method, time-domain thermoreflectance, sources of coherent phonons, microfabricated test structures, and the scanning thermal microscope, are enabling new capabilities for nanoscale thermal metrology.
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Citations
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References
Grain-size-dependent thermal conductivity of nanocrystalline yttria-stabilized zirconia films grown by metal-organic chemical vapor deposition
Guido Soyez,Jeffrey A. Eastman,L. J. Thompson,G. R. Bai,Peter M. Baldo,A.W. McCormick,Ronald J. DiMelfi,Abdelmageed Elmustafa,Mwilwa F. Tambwe,Donald S. Stone +9 more
TL;DR: A grain-size-dependent reduction in the room-temperature thermal conductivity of nanocrystalline yttria-stabilized zirconia is reported for the first time as discussed by the authors.
Scanning thermal microscopy of carbon nanotubes using batch-fabricated probes
TL;DR: In this article, a batch-fabricated thin-film thermocouple cantilever probes for scanning thermal microscopy (SThM) were used for imaging the phonon temperature distribution of electrically heated carbon-nanotube (CN) circuits.
195
Thermal conduction in metallized silicon‐dioxide layers on silicon
TL;DR: In this article, the vertical thermal conductivities of thermally grown (TG) and chemical vapor deposited (CVD) silicon dioxide layers 20 to 200 nm thick were measured using a simple, noncontact photothermal technique.
192
Thermal conductivity of Ga1−xAlxAs alloys
TL;DR: In this article, the authors measured the thermal conductivity of the Ga1−xAlxAs alloy system with LPE layers and found that the thermal resistivity increased with the temperature gradient in the bars with thin films of cholesteric liquid crystals.
185
The Copper Oxide Rectifier
TL;DR: In this paper, the authors measured the thermal conductance of the cuprous oxide rectifier and revealed a new physical phenomenon, asymmetrical thermal conductances, which is in the direction that would be expected from the electron theory of heat conduction.
184