Journal Article10.1134/S1063739715060050
Multilayer graphene-based flash memory
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TL;DR: In this paper, the write/erase and charge storage characteristics of a memory element based on a Si/HfO2/multilayer graphene/SiO 2/Si structure were evaluated.
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Abstract: For the memory element based on a Si/HfO2/multilayer graphene/SiO2/Si structure, the write/erase and charge storage characteristics are evaluated. A sufficiently large work function of electrons in multilayer graphene (MLG) makes it possible to increase the time of storing the charge injected into it. Using MLG in flash memory devices allows one to increase the speed and/or reduce the voltage of reprogramming such devices.
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Citations
•Dissertation
Graphene quantum dot based electronic devices
Xuan Pan
- 01 Jan 2018
TL;DR: In this article, the authors used models of electronic band structure from solid-state physics and relates the impact of band structure on observed negative differential resistance (NDR) effect, and evaluated electronic transport properties of GQD based two-terminal devices, specifically energy filters and resistor-type memory devices (memristors).
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Patent
Nonvolatile memory device including two-dimensional material and apparatus including the nonvolatile memory device
Jaeho Lee,Haeryong Kim,Sanghyun Jo,Hyeon-Jin Shin +3 more
- 13 Dec 2018
TL;DR: In this paper, a non-volatile memory device may include a storage stack including a plurality of charge storage layers between a channel element and a gate electrode facing the channel element.
1
Resonant tunneling based graphene quantum dot memristors
Xuan Pan,Efstratios Skafidas +1 more
TL;DR: The proposed two-terminal all graphene quantum dot (GQD) based resistor-type memory devices provide a promising route towards volatile memory devices utilizing only atomically thin two-dimensional graphene.
References
Determination of Work Function of Graphene under a Metal Electrode and Its Role in Contact Resistance
TL;DR: The work function values of graphene under various metals are accurately measured for the first time through a detailed analysis of the capacitance-voltage characteristics of a metal-graphene-oxide-semiconductor (MGOS) capacitor structure.
381
Graphene flash memory.
Augustin J. Hong,Emil B. Song,Emil B. Song,Hyung Suk Yu,Matthew J. Allen,Jiyoung Kim,Jesse D. Fowler,Jonathan K. Wassei,Jonathan K. Wassei,Young-Ju Park,Yong Wang,Jin Zou,Richard B. Kaner,Bruce H. Weiller,Kang L. Wang +14 more
TL;DR: Graphene flash memory has the potential to exceed the performance of current flash memory technology by utilizing the intrinsic properties of graphene, such as high density of states, high work function, and low dimensionality.
267
A New Memory Element Based on Silicon Nanoclusters in a ZrO[sub 2] Insulator with a High Permittivity for Electrically Erasable Read-Only Memory
TL;DR: In this paper, the write and erase function and data retention characteristics of a memory element designed to be used in electrically erasable read-only memory and based on a silicon-oxide-(silicon dot)-oxide-polysilicon structure, in which either a SiO2 insulator or a ZrO2 high-permittivity insulator are used as blocking oxides, are simulated.
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