Multiferroic materials and magnetoelectric physics: symmetry, entanglement, excitation, and topology
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TL;DR: A series of milestones and steady progress in the past decade have enabled our understanding of multiferroic physics substantially comprehensive and profound, which is further pushing forward the research frontier of this exciting area.
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Abstract: Multiferroics are those materials with more than one ferroic order, and magnetoelectricity refers to the mutual coupling between magnetism (spins and/or magnetic field) and electricity (electric dipoles and/or electric field). In spite of the long research history in the whole twentieth century, the discipline of multiferroicity has never been so highly active as that in the first decade of the twenty-first century, and it has become one of the hottest disciplines of condensed matter physics and materials science. A series of milestones and steady progress in the past decade have enabled our understanding of multiferroic physics substantially comprehensive and profound, which is further pushing forward the research frontier of this exciting area. The availability of more multiferroic materials and improved magnetoelectric performance are approaching to make the applications within reach. While seminal review articles covering the major progress before 2010 are available, an updated review addressing the n...
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Citations
Magnonic magnetoelectric coupling in ferroelectric/ferromagnetic composites
Levan Chotorlishvili,Chenglong Jia,Diana A. Rata,Liane Brandt,Georg Woltersdorf,Jamal Berakdar +5 more
TL;DR: In this paper, a short review is focused on the magnonic-based magnetoelectric coupling that forms at the interface of a metallic ferromagnet with a ferroelectric insulator.
Os Doping Suppressed Cu-Fe Charge Transfer and Induced Structural and Magnetic Phase Transitions in LaCu3Fe4-xOsxO12 (x = 1 and 2)
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TL;DR: In this article, a quadruple perovskite oxides LaCu3Fe4-xOsxO12 (x = 1 and 2) were prepared under high pressure and high-temperature conditions.
Origin of Multiferroism in VOX2 (X = Cl, Br, I) Monolayers
TL;DR: The microscopic origin of multiferroism in VOX2 (X = Cl, Br, I) monolayers is investigated based on a microscopic model. The dependence of the microscopic parameters on the magnetic and electric properties is qualitatively explained. The possibility of observing a spin-reorientation transition is investigated and the mechanism for its occurrence is presented.
Dynamics of structural and magnetic phase transitions in ferroborate YFe3(BO3)4
K. V. Frolov,Igor S. Lyubutin,Olga A. Alekseeva,Ekaterina Smirnova,I. A. Verin,V. L. Temerov,L. N. Bezmaternykh,I. A. Gudim,Vladimir V. Artemov,T.V. Dmitrieva +9 more
TL;DR: In this paper, a single crystal of the YFe3(BO3)4 single crystal was analyzed with an increase in temperature from 25 to 500 K. The results of Mossbauer measurements at 57Fe nuclei in the paramagnetic phase of YFe 3(BO 3)4 correlate well with the XRD data, but they do not separate the two structural states of iron ions Fe1 and Fe2 arising in the P3121 phase during the structural phase transition.
References
Colloquium: Topological insulators
M. Z. Hasan,Charles L. Kane +1 more
TL;DR: In this paper, the theoretical foundation for topological insulators and superconductors is reviewed and recent experiments are described in which the signatures of topologically insulators have been observed.
Topological insulators and superconductors
Xiao-Liang Qi,Shou-Cheng Zhang +1 more
TL;DR: Topological superconductors are new states of quantum matter which cannot be adiabatically connected to conventional insulators and semiconductors and are characterized by a full insulating gap in the bulk and gapless edge or surface states which are protected by time reversal symmetry.
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
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