Patent
Multi-parameter process and control method
Sergey A. Velichko,Jeffrey S. Nelson,Roger W. Eagans +2 more
- 04 Mar 2003
11
TL;DR: In this article, a method and system for generating control settings for a multi-parameter control system is presented, where the interdependencies of processing tools and the related effect on semiconductor wafers within a processing tool is factored into a mathematical model that considers desired and measured wafer quality parameters in the derivation of specific solutions of sets of possible quality parameter adjustments.
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Abstract: A method and system for generating control settings for a multi-parameter control system. The interdependencies of processing tools and the related effect on semiconductor wafers within a processing tool is factored into a mathematical model that considers desired and measured wafer quality parameters in the derivation of specific solutions of sets of possible quality parameter adjustments. A selection process determines a set of adjustments such as one that results in minimal changes to the process.
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Citations
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TL;DR: In this article, a blank wafer is placed in an etch chamber and a layer is deposited over it, comprising providing a deposition gas, forming the deposition gas into a deposition plasma, and stopping the deposition gases.
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TL;DR: In this paper, a batch control system of reaction chamber interlayer comprises a machine with multiple reactors and an information unit, which is used to calculate out optimum control parameter for each reaction chamber on machine and select out executable parameter according to executable state of the reaction chamber as well as to transmit result to said machine with reaction chambers in parallel mode or in serial mode.
4
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