Multi-band SWIR-MWIR-LWIR Type-II superlattice based infrared photodetector
Manijeh Razeghi,Arash Dehzangi,Jiakai Li +2 more
- 01 Jan 2021
- Vol. 2, pp 100054
35
TL;DR: In this paper, a bias-selectable multi-band infrared photodetector based on InAs/GaSb/AlSb and InAs-InAs/InAs1-xSbx type-II superlattice is presented.
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Abstract: Type-II InAs/GaSb superlattices (T2SLs) has drawn a lot of attention since it was introduced in 1970, especially for infrared detection as a system of multi-interacting quantum wells. In recent years, T2SL material system has experienced incredible improvements in material quality, device structure designs and device fabrication process, which elevated the performances of T2SL-based photo-detectors to a comparable level to the state-of-the-art material systems for infrared detection such as Mercury Cadmium Telluride (MCT). As a pioneer in the field, center for quantum devices (CQD) has been involved in growth, design, characterization, and introduction of T2SL material system for infrared photodetection. In this review paper, we will present the latest development of bias-selectable multi-band infrared photodetectors at the CQD, based on InAs/GaSb/AlSb and InAs/InAs1-xSbx type-II superlattice.
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Citations
Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy
TL;DR: In this paper , the influence of InSb interface (IF) engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-II superlattices (T2SLs) was systematically investigated.
5
Demonstration of Zn-Diffused Planar Long-Wavelength Infrared Photodetector Based on Type-II Superlattice Grown by MBE
TL;DR: In this paper , a planar longwavelength infrared photodetector based on InAs/InAs 1-xSbx. type-II superlattice with zinc diffusion was reported.
3
Design and simulation of two-color mid-infrared photoconductors based on intersubband transitions in quantum structures
Hannaneh Dortaj,Samiye Matloub +1 more
TL;DR: In this article , a two-color mid-infrared photoconductor at room temperature exploiting the superposition of different sizes of PbS/ZnS core/shell quantum dots as an absorber is introduced.
3
Modelling of GaAsSb/InAs type-II QW heterostructure and simulation of its optical gain characteristics under (100), (001) and (110) directional pressure
Syed Firoz Haider,A.M. Quraishi,Sandhya Kattayat,Smitha Josey,Jasgurpreet Singh,Mohammed Ezzeldien,Parvez Ahmad Alvi +6 more
TL;DR: In this article , a multi-band k.p Hamiltonian-based approach was adopted for modeling the GaAsSb/InAs/AlSb W-shaped quantum well (QW)-heterostructure and simulation of behaviour of optical gain characteristics under uni-and bi-axial pressures.
2
References
Infrared detectors: status and trends
TL;DR: In this article, the performance of infrared thermal detectors as compared to photon detectors is investigated and an overview of focal plane array architecture is given with emphasis on monolithic and hybrid structures.
1.2K
HgCdTe infrared detector material: history, status and outlook
TL;DR: A review of the history, the present status and possible future developments of HgCdTe ternary alloy for infrared (IR) detector applications is presented in this article.
Third-generation infrared photodetector arrays
TL;DR: In this paper, fundamental and technological issues associated with the development and exploitation of third-generation IR photon detectors are discussed, and the most recently developed focal plane arrays based on type-II strained-layer superlattices and quantum dot IR photodetectors are considered.
850
Proposal for strained type II superlattice infrared detectors
TL;DR: In this article, it was shown that superlattices made of InAs−Ga1−xInxSb x∼0.4 have favorable optical properties for infrared detection.
753
A new semiconductor superlattice
TL;DR: In this article, a new semiconductor superlattice where the interaction of the conduction band in one host material with the valence band of the other host material plays an important role is treated theoretically, through the use of Bloch functions.
564