Journal Article10.1109/EDL.1982.25548
Modulation-doped AlGaAs/GaAs heterostructure charge coupled devices
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TL;DR: In this article, the advantages of modulation-doped heterostructure over conventional materials structures for high speed CCD applications are outlined and the first demonstration of charge transfer in a modulationdoped AlGaAs/GaAs heterojunction is reported.
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Abstract: The advantages of the modulation-doped heterostructure over conventional materials structures for high speed CCD applications are outlined. In addition, the first demonstration of charge transfer in a modulation-doped AlGaAs/GaAs heterojunction is reported. A ten cell, three phase Schottky barrier gate CCD was fabricated using this structure and operated as a shift register. The details of the device fabrication and characterization are presented.
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Citations
Dark Current in Selectively Doped N-AlGaAs/GaAs CCDs
TL;DR: In this article, the dark current of Schottky-barrier gate charge-coupled devices (CCDs) utilizing selectively doped N-AlGaAs/GaAs structures grown by molecular beam epitaxy was investigated.
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Charge storage in AlGaAs/GaAs heterojunction surface channel CCDs
A.C. Krikos,C. A. Paz De Araujo +1 more
- 21 Mar 1988
TL;DR: In this article, a surface channel charge-coupled device (CCD) using an AlGaAs/GaAs heterostructure is presented, which serves as an effective substitute for the traditional silicon dioxide insulator in a MOS diode.