Open Access
Modeling of Copper Migration In CdTe Photovoltaic Devices
Da Guo
- 01 Jan 2017
1
About: The article was published on 01 Jan 2017. and is currently open access. The article focuses on the topics: Photovoltaic system & Cadmium telluride photovoltaics.
read more
Chat with Paper
AI Agents for this Paper
Find similar papers on Google Scholar, PubMed and Arxiv
Write a critical review of this paper
Analyze citations of this paper to find unaddressed research gaps
Citations
A Unified 2D Solver for Modeling Carrier and Defect Transport in Photovoltaic Devices
Abdul R. Shaik,Daniel Brinkman,Igor Sankin,Dmitry Krasikov,Christian Ringhofer,Dragica Vasileska +5 more
- 26 Nov 2018
TL;DR: A 2D Unified Solver for modeling metastability and reliability in solar cells and proposes and implements the standard implicit Euler method with Newton iteration for solving the reactions, which leads to improved accuracy and numerical stability.
2
References
Large-signal analysis of a silicon Read diode oscillator
D.L. Scharfetter,H.K. Gummel +1 more
TL;DR: In this article, the authors presented theoretical calculations of the large-signal admittance and efficiency achievable in a silicon p-n-v-ns Read IMPATT diode.
2.2K
Point defects and dopant diffusion in silicon
TL;DR: In this paper, the authors present the current state of experimental data for basic parameters such as point-defect diffusivities and equilibrium concentrations and address a number of questions regarding the mechanisms of dopant diffusion.
1.3K
Thin‐film CdS/CdTe solar cell with 15.8% efficiency
J. Britt,Chris Ferekides +1 more
TL;DR: In this article, the fabrication and characteristics of high efficiency thin-film CdS/CdTe heterojunction solar cells are described, and a high efficiency solar cell with an AM1.5 efficiency of 15.8% is reported.
1.1K
Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe
Su-Huai Wei,Shengbai Zhang +1 more
TL;DR: In this paper, the authors systematically calculated the formation energies and transition energy levels of intrinsic and extrinsic defects and defect complexes in the prototype CdTe and investigated the limiting factors for p-type and n-type doping in this material.
523
•Book
Properties of Narrow-Gap Cadmium-Based Compounds
Peter Capper
- 01 Dec 1995
TL;DR: In this paper, Mercury cadmium telluride: growth mechanical and thermal properties dielectric and optical properties diffusion defects band structure and carrier properties surfaces and interfaces exploitation in devices.
415