Reference Entry10.1002/047134608X.W4941
Microwave Solid-State Devices
Dominique Schreurs
- 27 Dec 1999
TL;DR: In this article, the authors presented a comparison of microwave and millimeter wave transistors with microwave and mmWave transistors. But they focused on the transistors and not on the channels.
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Abstract: The sections in this article are
1
Microwave and Millimeter Wave Diodes
2
Microwave and Millimeter Wave Transistors
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References
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Semiconductor Devices: Physics and Technology
S. M. Sze
- 01 Apr 1985
TL;DR: In this paper, the transmission coefficient of a symmetric resonance tunneling diode has been derived for a Symmetric Resonant-Tunneling Diode, and it has been shown that it can be computed in terms of the Density of States in Semiconductor.
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Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
TL;DR: In this paper, a modulation-doping technique was used to spatially separate conduction electrons and their parent impurity atoms, thereby reducing the influence of ionized and neutral impurity scattering on the electron motion.
1.5K
Power Waves and the Scattering Matrix
TL;DR: In this paper, the physical meaning and prop-erties of the power waves defined by [Equation], [ Equation] where V/sub i/ and Z/sub I/ are the voltage at and the current flowing into the ith port of a junction and the impedance of the circuit connected to the it h port.
Heterostructure bipolar transistors and integrated circuits
Herbert Kroemer
- 01 Jan 1982
TL;DR: In this paper, the authors propose an inverted transistor strucure with a smaller collectors on top and a larger emitter on the bottom, with speed advantages over the common "emitter-up" design.