Microelectronics: Processing and device design

TL;DR: In this article, an insulated gate field effect transistor is constructed by first forming a non-single crystalline semiconductor layer or island on an insulating surface of a substrate, and a gate insulating layer is then formed on the semiconductor layers.

TL;DR: Calculations are presented describing the influence of external diffusion in the kinetics of solid-phase immunoassays with systems where one reactant is immobilized at the surface of a sphere of arbitrary radius.

TL;DR: In this paper, an improved metallized structure is formed from a copper seed layer (46) and a copper structure (48), which is then electroplated over the remaining seed layer.

TL;DR: In this article, an ISFET structure and a method for manufacturing that structure such that external electrical contact to the P+ source and drain regions is made through individual holes etched from the back to the source or drain regions with sidewall isolation being provided in the holes and metallization covering the surface of said sidewalls and extending to contact pads on the back.