Patent
Method for providing silicide bridge contact between silicon regions separated by a thin dielectric
Dale L. Critchlow,John K. DeBrosse,Rick Lawrence Mohler,Wendell P. Noble,Paul C. Parries +4 more
- 01 Sep 1988
76
TL;DR: In this paper, a silicide bridge is constructed by selectively growing over exposed silicon regions under conditions that provide controlled lateral growth over the thin dielectric without also permitting lateral growth on other insulator regions.
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Abstract: A method for forming a silicide bridge bewteen a diffusion region and an adjacent poly-filled trench separated by a thin dielectric. Silicon is selectively grown over exposed silicon regions under conditions that provide controlled lateral growth over the thin dielectric without also permitting lateral growth over other insulator regions. A refractory metal layer is then deposited and sintered under conditions that limit lateral silicide growth, forming the bridge. This process avoids the random fails produced by previous processes while enhancing the compatibility of bridge formation with shallow junctions, without introducing extra masking steps or other process complexities.
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Citations
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References
Patent
Method for growing monocrystalline silicon through mask layer
John F. Corboy,Lubomir L. Jastrzebski,Scott C. Blackstone,Robert H. Pagliaro +3 more
- 10 May 1984
TL;DR: In this paper, a monocrystalline silicon layer is formed on a mask layer on a semiconductor substrate, and an epitaxial layer is then grown by a two-step deposition/etching cycle.
100
Patent
Selective epitaxial growth method
Hine Shirou,Tsubouchi Natsuo +1 more
- 28 Jan 1985
TL;DR: In this paper, the authors proposed to eliminate generation of crystal defect at the periphery of semiconductor layer and obtain flat grown layer by providing an aperture through anisotropic dry etching and realizing epitaxial growth under a reduced pressure of at least 100Torr or less with the remaining film used as mask.
97
Patent
Method of manufacturing silicide contacts for CMOS devices
David B. Scott,Roderick D. Davies,Yee-Chaung See +2 more
- 29 May 1981
TL;DR: In this article, a metal is then deposited, and silicide is formed to connect the gate-level interconnect to the respective source and drain regions, and self-aligned contacts are created, and no unwanted pn junctions are created.
90
Growth Process of Silicon Over SiO2 by CVD: Epitaxial Lateral Overgrowth Technique
TL;DR: In this paper, l'influence des parametres de croissance sur la morphologie de surface and la formation de defauts dans les couches deposees is discussed.
87
Patent
Method of trench filling
Klaus Dietrich Beyer,Victor Joseph Silvestri +1 more
- 31 Oct 1985
TL;DR: In this paper, a method of simultaneously producing doped silicon filled trenches in areas where a substrate contact is to be produced and trench isolation in other areas was proposed, where Borosilicate glass lines the sidewalls of those trenches where a contact is desired and undoped epitaxially grown silicon filled all the trenches.
74