Patent
Method for producing a semiconductor component with a through-contact and semiconductor component with through-contact
Jochen Kraft,Stefan Jessenig,Günther Koppitsch,Franz Schrank,Jordi Teva,Bernhard Löffler,Jörg Siegert +6 more
- 09 Aug 2011
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TL;DR: In this article, a metallization is applied to the intermetal dielectric and the semiconductor material of the substrate to form a contact hole, and a contact area of a connection metal plane that faces the substrate is exposed in the contact hole.
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Abstract: Through the intermetal dielectric (2) and the semiconductor material of the substrate (1) a contact hole is formed, and a contact area of a connection metal plane (3) that faces the substrate is exposed in the contact hole. A metallization (11) is applied, which forms a connection contact (12) on the contact area, a through-contact (13) in the contact hole and a connection contact (20) on a contact area facing away from the substrate and/or on a vertical conductive connection (15) of the upper metal plane (24).
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Citations
Patent
Chip package and method for forming the same
Chien-Hung Liu
- 29 Dec 2011
TL;DR: In this paper, a chip package includes a substrate, a signal pad and a ground pad disposed on the substrate; a first and a second conducting layers, electrically connected to the signal pad, protruding from the lower surface of the substrate.
190
Patent
Method of producing an opening with smooth vertical sidewall in a semiconductor substrate
Günther Koppitsch,Bernhard Löffler +1 more
- 15 Oct 2015
TL;DR: In this article, an opening is etched from a main surface of a substrate (1) of semiconductor material by deep reactive ion etching comprising a plurality of cycles, each of the cycles including a deposition of a passivation in the opening and an application of an etchant.
3
Patent
Semiconductor device with through-substrate via and corresponding method of manufacture
Franz Schrank,Sara Carniello,Hubert Enichlmair,Jochen Kraft,Bernhard Loeffler,Rainer Holzhaider +5 more
- 12 Dec 2014
TL;DR: In this article, a dielectric layer is arranged on the main surface of a semiconductor substrate, and a passivation layer (6) is arranged over the passivation layers to stabilize the bottom of the through-substrate via.
2
Patent
A method of producing a semiconductor device having an interconnect through the substrate
Jochen Kraft,Franz Schrank,Martin Schrems +2 more
- 01 Aug 2012
TL;DR: In this paper, a semiconductor substrate is provided on a main surface with an intermetal dielectric including metal planes and on an opposite rear surface with insulation layer and an electrically conductive connection pad.
2
Patent
Semiconductor device with through-substrate via of enhanced conductivity and corresponding fabrication method
Jochen Kraft,Sara Carniello,Martin Schrems +2 more
- 16 Apr 2013
TL;DR: In this article, the semiconductor device comprises a substrate (1) with an upper surface (20), the substrate including a semiconductor layer (3), a connection pad (7), and an electrically conductive via layer (6) arranged at the sidewall (19) and in contact with the connection pad.
1
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Patent
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Peter Ramm,Reinhold Dipl.-Phys. Buchner +1 more
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TL;DR: In this article, a method of making a vertical integrated circuit by providing first and second substrates surfaces of which have layers with circuit structures and metallization planes therein is proposed.
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Patent
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Emmerich Bertagnolli,Helmut Klose +1 more
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