Method for Producing a Semiconductor Component, and Semiconductor Component

TL;DR: In this paper, a chip package includes a substrate, a signal pad and a ground pad disposed on the substrate; a first and a second conducting layers, electrically connected to the signal pad, protruding from the lower surface of the substrate.

TL;DR: In this paper, a method of forming a conductive element on a substrate and the resulting assembly is described, which includes forming a groove in a sacrificial layer overlying a dielectric region disposed on the substrate, which is then removed by a nonphotolithographic method, such as ablating with a laser, mechanical milling, or sandblasting.

TL;DR: In this paper, a semiconductor device for detection of radiation is described, which consists of a substrate with a main surface, a dielectric layer, an integrated circuit including at least one component sensitive to radiation, a wiring of the integrated circuit, an electrically conductive through-substrate via contacting the wiring, and a structured filter layer.

TL;DR: In this article, a metallization is applied to the intermetal dielectric and the semiconductor material of the substrate to form a contact hole, and a contact area of a connection metal plane that faces the substrate is exposed in the contact hole.

TL;DR: In this article, the authors describe a three-dimensional integration of semiconductor devices and a resulting device, which combines low temperature wafer bonding methods with backside/substrate contact processing methods, preferably with silicon on insulator devices.

TL;DR: In this article, a sensor microstructure contact scheme is provided for making backside electrical, mechanical, fluidic, or other contact to mechanical microstructures, which is applicable to pressure sensors, shear stress sensors, flow rate sensors, temperature sensors, resonant microactuators, and other microsensors.

TL;DR: In this paper, the authors describe the design, fabrication, and characterization of an electrical through-wafer (ETWI) technology for silicon substrates that can be broadly integrated with MEMS and IC processes.

TL;DR: In this paper, the authors describe the process of forming a through hole from the back of a semiconductor material body, forming a hole insulating layer of electrically isolating material laterally covering the walls of the hole, and forming a connection structure extending on top of the upper surface of the body between and in electrical contact with the through contact region and the electronic component.