Patent
Method for fabricating a semiconductor structure including a metal oxide interface with silicon
Jamal Ramdani,Ravindranath Droopad,Z. Yu +2 more
- 12 Jul 2000
368
TL;DR: In this paper, a method of fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface, forming on the surface of the silicon substrate, by atomic layer deposition (ALD), a seed layer (20;20') characterised by a silicate material and forming, by ALD, one or more layers of a high dielectric constant oxide (40) on the seed layer.
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Abstract: A method of fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12), forming on the surface (12) of the silicon substrate (10), by atomic layer deposition (ALD), a seed layer (20;20') characterised by a silicate material and forming, by atomic layer deposition (ALD) one or more layers of a high dielectric constant oxide (40) on the seed layer (20;20').
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Citations
Patent
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TL;DR: In this paper, a method of forming a boride layer for integrated circuit fabrication is described, which is based on chemisorbing monolayers of boron-containing compound and one refractory metal compound onto a substrate.
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TL;DR: In this paper, the UV photoexcitation process is used to remove native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films and increasing the excitation energy of precursors.
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Atomic layer-deposited laaio3 films for gate dielectrics
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TL;DR: In this paper, a LaAlO 3 gate dielectric is formed by atomic layer deposition employing a lanthanum sequence and an aluminum sequence, which is thermodynamically stable and has minimal reactions with a silicon substrate or other structures during processing.
369
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TL;DR: Pulsed laser deposition of high-temperature superconducting thin films for active and passive device applications is discussed in this article, with a focus on the commercial scale-up of Pulsed Laser Deposition.
Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide
Yuji Matsumoto,Makoto Murakami,T. Shono,Tetsuya Hasegawa,Tomoteru Fukumura,Masashi Kawasaki,Parhat Ahmet,Toyohiro Chikyow,Shin-ya Koshihara,Hideomi Koinuma +9 more
TL;DR: The observation of transparent ferromagnetism in cobalt-doped anatase thin films with the concentration of cobalt between 0 and 8% is reported, indicating the existence of ferromagnetic long-range ordering.
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Patent
Large scale photolithographic solid phase synthesis of polypeptides and receptor binding screening thereof
Michael C. Pirrung,Read J Leighton,Stephen P. A. Fodor,Lubert Stryer +3 more
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TL;DR: In this paper, a polypeptide array can be synthesized on a substrate by attaching photoremovable groups to the surface of a substrate, exposing selected regions of the substrate to light to activate those regions, attaching an amino acid monomer with a photoregressive group to the activated regions, and repeating the steps of activation and attachment until the desired length and sequences are synthesized.
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