Patent
Method and apparatus for processing semiconductor substrates with hydroxyl radicals
Himanshu Pokharna,Shankar Chandran,Srinivas D. Nemani,Chen-An Chen,Francimar Campana,Ellie Yieh,Li-Qun Xia +6 more
- 20 Apr 2001
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TL;DR: In this paper, a method and apparatus for processing semiconductor substrates by reacting hydroxyl radicals with a precursor to cause the precursor to decompose and form a film which deposits on a substrate.
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Abstract: A method and apparatus for processing semiconductor substrates by reacting hydroxyl radicals with a precursor to cause the precursor to decompose and form a film which deposits on a substrate. Hydroxyl radicals, which are produced in a hydroxyl-ion producing apparatus outside of a chemical vapor deposition reactor, are mixed with a precursor to form a hydroxyl ions-precursor mixture. The hydroxyl ions-precursor mixture is introduced into the chemical vapor deposition reactor.
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Citations
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52
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Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
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Kouhei Kawamura
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