Journal Article10.1063/1.2186517
Metal gate work function engineering using AlNx interfacial layers
Husam N. Alshareef,Husam N. Alshareef,H. Luan,Kisik Choi,H.R. Harris,Huang-Chun Wen,Manuel Quevedo-Lopez,Prashant Majhi,Byoung Hun Lee +8 more
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TL;DR: In this paper, a metal gate work function enhancement using thin AlNx interfacial layers has been evaluated and it was found that band edge effective work functions (∼5.10eV) can be achieved on hafnium-based high dielectric constant (high-k) materials using the AlNix interfacial layer and TiSiN electrodes.
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Abstract: Metal gate work function enhancement using thin AlNx interfacial layers has been evaluated. It was found that band edge effective work functions (∼5.10eV) can be achieved on hafnium-based high dielectric constant (high-k) materials using the AlNx interfacial layer and TiSiN electrodes. It was also found that the effective work function enhancement by the AlNx interfacial layer increased when the concentration of SiO2 in the gate dielectric was increased. Thus, the enhancement was minimal for HfO2 and maximum for SiO2. A model is proposed to explain these results and a bonding analysis is presented to support the proposed model.
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Citations
High-K materials and metal gates for CMOS applications
John Robertson,Robert M. Wallace +1 more
TL;DR: In this article, a review of the high-K gate stack is presented, including the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure, their electronic structure, band offsets, electronic defects, charge trapping and conduction mechanisms, reliability, mobility degradation and oxygen scavenging.
integrations and challenges of novel high-k gate stacks in advanced cmos technology
TL;DR: In this article, the authors review the current status and challenges in novel high-k dielectrics and metal gates research for planar CMOS devices and alternative device technologies to provide insights for future research.
145
Maximizing performance for higher K gate dielectrics
TL;DR: In this paper, the authors point out that scaling of complementary metal oxide semiconductor gate stacks will require gate dielectrics with a higher dielectric constant (K) than HfO2.
143
Band offsets and work function control in field effect transistors
TL;DR: In this article, the Schottky barrier heights of metal gate materials on high dielectric constant (high K) oxides for use in advanced Si field effect transistors are calculated accurately for ideal interfaces of various stoichiometries and for interfaces with defects.
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Control of Schottky Barrier Heights on High-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>K</mml:mi></mml:math>Gate Dielectrics for Future Complementary Metal-Oxide Semiconductor Devices
24 Aug 2007
TL;DR: Researchers calculated Schottky barrier heights on HfO2 gate oxides, finding strong variations with metal work function and oxide termination, indicating metal gate materials won't limit scaling of metal-oxide semiconductor devices.
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Band offsets of wide-band-gap oxides and implications for future electronic devices
TL;DR: In this paper, the Schottky barrier heights and band offsets for high dielectric constant oxides on Pt and Si were calculated and good agreement with experiment is found for barrier heights.
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The mechanisms of Schottky barrier pinning in III-V semiconductors: Criteria developed from microscopic (atomic level) and macroscopic experiments
TL;DR: In this article, the most popular models for the III-V semiconductors are examined in terms of the metal:III-V chemistry including its correlation with barrier height and/or the effect of metal thickness.
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