Memristor-based arithmetic

TL;DR: The memristor (memory + resistor) as discussed by the authors was proposed as the fourth basic circuit element by Leon Chua and Sung Mo Kang in 1971, and it has been shown to have a nonlinear resistance that can be memorized indefinitely by controlling flow of the electrical charge or the magnetic flux.

TL;DR: A new low-power gate design, i.e., memristors-as-drivers gates, is proposed, which overcomes each of these issues by combining sense circuitry with the IMPLY operation.

TL;DR: A new architecture for a digital full-adder is presented, which is up to 41% faster than existing IMPLY-based serial designs while requiring up to 78% less area (memristors) compared to the existing parallel design.

TL;DR: Two memristor-based implementations of an N-bit shift-and-add multiplier are proposed, one using IMPLY operations and a second using MAD operations, both of which maintain a lower area and lower delay than the CMOS equivalent.

TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.

TL;DR: A nanoscale silicon-based memristor device is experimentally demonstrated and it is shown that a hybrid system composed of complementary metal-oxide semiconductor neurons and Memristor synapses can support important synaptic functions such as spike timing dependent plasticity.

TL;DR: Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.

TL;DR: CMOS Circuit and Logic Design: The Complemenatry CMOS Inverter-DC Characteristics and Design Strategies.