Journal Article10.1016/S1369-8001(00)00135-9
Material characterization need for SiC-based devices
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TL;DR: In this paper, the characterization techniques can roughly be divided into two different categories, routine characterization that are made on most grown material and specialized characterization that were performed in order to study and understand specific material properties.
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About: This article is published in Materials Science in Semiconductor Processing. The article was published on 06 Feb 2001. The article focuses on the topics: Characterization (materials science).
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Citations
Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes
TL;DR: In this article, the authors investigated the generation and evolution of defects in 4H-SiC p-n junctions due to carrier injection under forward bias and found that Shockley stacking faults with rhombic or triangular shapes bound by partial dislocation loops with dislocation lines along Peierls valleys or along the intersection of the basal plane containing the fault and diode surface.
121
Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers
TL;DR: In this article, the free carrier lifetime of thin, lightly-doped n-type 4H-SiC epilayers and some deep levels (the Z1/2 center, the EH6/7 center and the D1 center) were investigated.
76
Dislocation nucleation in 4H silicon carbide epitaxy
TL;DR: The dislocation nucleation during 4H silicon carbide homoepitaxy has been investigated using chemical etching, optical microscopy, atomic force microscopy and transmission electron microscopy as mentioned in this paper.
55
Defects in SiC
Erik Janzén,Ivan Gueorguiev Ivanov,Nguyen Tien Son,Björn Magnusson,Z. Zolnai,Anne Henry,J. P. Bergman,L. Storasta,F.H.C. Carlsson +8 more
- 31 Dec 2003
TL;DR: In this paper, the selection rules for transitions between the electronic levels of shallow donors in 4H-SiC in the dipole approximation are derived and the ionization energy for the N donor at hexagonal site is determined.
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Identification and Carrier Dynamics of the Dominant Lifetime Limiting Defect in n− 4H‐SiC Epitaxial Layers
TL;DR: The identity and characteristics of the lifetime limiting defects in n-type 4H-SiC epitaxial layers are of particular current interest, due to the suitability of this material for high-power, solid-state switching devices as discussed by the authors.
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References
Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbide
TL;DR: The role of vanadium as minority carrier lifetime killer in SiC-based optoelectronic devices is suggested from these data as discussed by the authors, which suggests that vanadium acts as a deep acceptor, V4+Si(3d1)/V3+Si (3d2)−A0/A−, and possibly also as a donor.
157
Photoluminescence and transport studies of boron in 4H SiC
S. G. Sridhara,L. L. Clemen,Robert P. Devaty,Wolfgang J. Choyke,David J. Larkin,H. S. Kong,T. Troffer,Gerhard Pensl +7 more
TL;DR: In this paper, a peak near 3838 A appears in the low-temperature photoluminescence spectrum of 4H SiC homoepitaxial films.
133
Photoluminescence of Radiation Defects in Ion-Implanted 6 H SiC
Lyle Patrick,Wolfgang J. Choyke +1 more
TL;DR: In this paper, a comparison of the ion-and electron-bombarded SiC spectrum in ion implantation and electron bombardment was conducted, and it was shown that the luminescence center is a pure-defect complex, possibly a divacancy.
127
Nitrogen doping concentration as determined by photoluminescence in 4H– and 6H–SiC
TL;DR: In this article, a line-fitting procedure with the proper line shapes is used to determine the contribution of the BE and FE lines in the PL spectrum, and the results are compared with a previous work performed for the case of 6H-SiC only.
108
White-beam synchrotron topographic studies of defects in 6H-SiC single crystals
TL;DR: In this paper, Frank-type hollow-core screw dislocations with Burgers vectors typically equal to 3-7 times the c lattice parameter were found to have hollow cores, known as "micropipes".
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