Journal Article10.1016/0079-6786(72)90006-4
Liquid phase epitaxy
16
About: This article is published in Progress in Solid State Chemistry. The article was published on 01 Jan 1972. The article focuses on the topics: Epitaxy.
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Citations
Liquid phase epitaxy
TL;DR: In this paper, a comprehensive review of liquid phase epitaxy (LPE) of semiconductors is presented, and the advantages and weaknesses of LPE with respect to device applications in comparison with competing methods are discussed.
110
Micro-reaction engineering applications of reaction engineering to processing of electronic and photonic materials
TL;DR: In this article, a review of chemical reaction engineering applications to microelectronic processing is presented, along with recent examples of applications of chemical reactions to micro-electronic processes, such as chemical vapor deposition and plasma processing of thin films.
82
Infrared Focal Planes in Intrinsic Semiconductors
TL;DR: The state-of-the-art of intrinsic semiconductor detector arrays is reviewed and future areas of development are project, including hybrid focal planes incorporating ≳ 1000 element photodiode arrays and monolithic charge transfer devices.
74
Liquid phase epitaxy processing for high temperature superconductor tapes
TL;DR: In this paper, the authors used liquid phase epitaxy to grow high-temperature superconductor thick films for high J c applications, achieving T C values of 91 K and J c values over 1×10 6 A/cm 3 (77 K, 0 T) have been achieved.
32
References
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TL;DR: In this article, the incorporation of solute elements into single crystals of germanium grown from the melt is examined in terms of a simple model, which takes account of the contribution of the solute transport in the melt, owing to diffusion and fluid motion, to the over-all process of impurity incorporation during steady-state crystallization.
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A prismatic substructure formed during solidification of metals
J. W. Rutter,B. Chalmers +1 more
TL;DR: In this article, single crystals of tin grown from the melt under a wide range of conditions are shown to exhibit a fibrous structure which manifests itself as parallel ridges ("corrugations") on the free surface o...
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Phase equilibria in the GaAs and the GaP systems
TL;DR: In this article, a thermodynamically consistent treatment of the available solubility and vapor pressure measurements for the two binary systems Ga�As and GaP has been made leading to reasonable estimates of the complete composition-temperature and vapour pressuretemperature curves.
239
Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy Gaps
H. C. Casey,M. B. Panish +1 more
TL;DR: In this article, photoresponse measurements were made to determine the compositional dependence of the Ga1−xAlxAs direct Γ15→Γ1 and indirect Γ 15→X1 energy gaps.
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