Journal Article10.1063/1.1378046
Large area dense nanoscale patterning of arbitrary surfaces
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TL;DR: In this article, a large-area fabrication of hexagonally ordered metal dot arrays with an area density of ∼1011/cm2 was demonstrated by combining block copolymer nanolithography and a trilayer resist technique.
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Abstract: We demonstrate a large-area fabrication of hexagonally ordered metal dot arrays with an area density of ∼1011/cm2. We produced 20 nm dots with a 40 nm period by combining block copolymer nanolithography and a trilayer resist technique. A self-assembled spherical-phase block copolymer top layer spontaneously generated the pattern, acting as a template. The pattern was first transferred to a silicon nitride middle layer by reactive ion etch, producing holes. The nitride layer was then used as a mask to further etch into a polyimide bottom layer. The metal dots were produced by an electron beam evaporation followed by a lift-off process. Our method provides a viable route for highly dense nanoscale patterning of different materials on arbitrary surfaces.
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Citations
First-principles theory of nanoscale pattern formation in ultrathin alloy films: A comparative study of Fe-Ag on Ru(0001) and Mo(110) substrates
TL;DR: In this paper, the formation of nanoscale self-assembled compositional patterns in monolayer bulk-immiscible alloy films is studied from first principles within the framework of a previously proposed hybrid atomistic-continuum model.
17
Surface-independent vertical orientation of cylindrical microdomains in block copolymer thin films directed by comb-coil architecture
TL;DR: In this paper cylindrical microdomains of block copolymer thin films consisting of polystyrene and poly(methyl methacrylate) were fabricated regardless of the substrate by introduction of a grafted architecture into the diblock copolymers chains.
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Patent
Method of forming a pattern
Naoko Kihara,Hiroyuki Hieda,Yoshiyuki Kamata +2 more
- 19 Aug 2008
TL;DR: In this article, a pattern-forming method was proposed to create an easy-to-etch region constituted by PS and having a cylindrical or lamellar configuration extending in a first direction, forming an imprinting resist layer on the phase-separated layer, subjecting the imprinting resists to imprinting to form an uneven pattern consisting of projections and recesses.
17
Patent
Novel high performance materials and processes for manufacture of nanostructures for use in electron emitter ion and direct charging devices
David H. Pan,Fa-Gung Fan,Joseph A. Swift,Dan A. Hays,Michael F. Zona +4 more
- 05 Mar 2008
TL;DR: In this paper, an electron emitter array can include a plurality of nanostructures, each of which can include either a first end and a second end, where the first end is connected to a first electrode and the second end can be positioned to emit electrons, and each of the plurality of nano-structures can be formed of one or more of oxidation resistant metals, doped metals, metal alloys, metal oxides, and ceramics.
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