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Ionizing radiation effects in MOS devices and circuits
Tso-Ping Ma,Paul V. Dressendorfer +1 more
- 01 Jan 1989
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TL;DR: In this article, Hughes et al. present a survey of the effects of radiation on MOS devices and circuits, including hardening technology, process-induced radiation effects, and interface traps.
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Abstract: Historical Perspective (H. Hughes). Electron--Hole Generation, Transport, and Trapping in SiO2 (F. McLean, et al.). Radiation--Induced Interface Traps (P. Winokur). Radiation Effects on MOS Devices and Circuits (P. Dressendorfer). Radiation--Hardening Technology (P. Dressendorfer). Process--Induced Radiation Effects (T. Ma). Source Considerations and Testing Techniques (K. Kerris). Transient--Ionization and Single--Event Phenomena (S. Kerns). Index.
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Citations
Multi-scale modeling of low dose-rate total dose effects in advanced microelectronics
G. I. Zebrev,Maxim S. Gorbunov,P. N. Osipenko +2 more
- 11 May 2008
TL;DR: In this article, a multi-scale approach based on physical, circuit and system levels for radiation effects modeling is considered and the model of low dose rate sensitivity of subthreshold leakage current is presented.
1
Analysis of gamma-irradiation induced oxide charge and interface trap effects in power VDMOSFETs
S. Djoric-Veljkovic,V. Davidovic +1 more
- 12 Sep 1995
TL;DR: It is shown that gamma-irradiation induced degradation of power VDMOSFETs is due to a significant increase in oxide charge and a somewhat smaller increase of interface traps.
1
Environmental Damage to Electronic Products
Milton Ohring,Lucian Kasprzak +1 more
- 01 Jan 2011
TL;DR: The sources of integrated circuit damage considered up to this point originated within the materials and substances used in manufacturing, but now we confront degradation and damage to electronic products from outside sources such as humid atmospheres, airborne contaminant particles, and ionizing radiation as mentioned in this paper.
1
Radiation Dosimeters for High Dose by Commercial PMOS Transistors Using Normalized Drain Current as Dosimetric Parameter
Kuei-Shu Chang-Liao,Tai-Liang Wu +1 more
TL;DR: A new dosimetric parameter, that is shift rate of drain current, is proposed and demonstrated to reduce the possible errors of measurement, and some modifications were suggested to compensate the room temperature effects.
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Subthreshold response of a MOSFET to radiation effects
J. Banqueri,M.A. Carvajal,S. Martinez-Garcia,Alberto J. Palma,M. Vilches,Antonio M. Lallena +5 more
- 21 Mar 2013
TL;DR: In this article, the degradation of the sub-threshold swing in a general-purpose pMOSFET was evaluated and compared with the threshold voltage shift under gamma rays from a 60Co source up to 56 Gy.
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