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Ionizing radiation effects in MOS devices and circuits
Tso-Ping Ma,Paul V. Dressendorfer +1 more
- 01 Jan 1989
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TL;DR: In this article, Hughes et al. present a survey of the effects of radiation on MOS devices and circuits, including hardening technology, process-induced radiation effects, and interface traps.
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Abstract: Historical Perspective (H. Hughes). Electron--Hole Generation, Transport, and Trapping in SiO2 (F. McLean, et al.). Radiation--Induced Interface Traps (P. Winokur). Radiation Effects on MOS Devices and Circuits (P. Dressendorfer). Radiation--Hardening Technology (P. Dressendorfer). Process--Induced Radiation Effects (T. Ma). Source Considerations and Testing Techniques (K. Kerris). Transient--Ionization and Single--Event Phenomena (S. Kerns). Index.
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Citations
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Chapter 4 – Radiation Effects and Low-Frequency Noise in Silicon Technologies
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- 01 Jan 2001
TL;DR: In this article, several measures for hardening metal-oxide-semiconductor (MOS) based technologies, especially for low-temperature applications, are discussed, and the ultimate goal of these modeling efforts is to be able to simulate the expected damage in a given radiation and shielding environment, which replace timely and expensive radiation testing.
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Radiation hardness test of FSSR, a multichannel, mixed signal chip for microstrip detector readout
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TL;DR: The Fermilab Silicon Strip Readout (FSSR) chip as mentioned in this paper is a 128-channel mixed signal circuit, which was designed for processing the signals from the microstrip detectors of the BTeV experiment at the Tevatron collider.
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