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Ionizing radiation effects in MOS devices and circuits
Tso-Ping Ma,Paul V. Dressendorfer +1 more
- 01 Jan 1989
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TL;DR: In this article, Hughes et al. present a survey of the effects of radiation on MOS devices and circuits, including hardening technology, process-induced radiation effects, and interface traps.
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Abstract: Historical Perspective (H. Hughes). Electron--Hole Generation, Transport, and Trapping in SiO2 (F. McLean, et al.). Radiation--Induced Interface Traps (P. Winokur). Radiation Effects on MOS Devices and Circuits (P. Dressendorfer). Radiation--Hardening Technology (P. Dressendorfer). Process--Induced Radiation Effects (T. Ma). Source Considerations and Testing Techniques (K. Kerris). Transient--Ionization and Single--Event Phenomena (S. Kerns). Index.
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Citations
Investigation of gate oxide thickness effect on the radiation-induced traps in MOSFET devices using OTCP method
Boualem Djezzar,Slimane Oussalah,A. Smatti,R. Yefsah,M. Mehlous,B. Mansouri +5 more
- 01 Sep 2007
TL;DR: The results show that the turn around effect occurs at different doses depending on oxide thickness, which means that thinner oxides are less sensitive to radiation than thicker one.
3
Clocked dosimeter compatible with digital CMOS technology
TL;DR: Two versions of a radiation dosimeter are presented, they are CMOS circuits built around a PMOSFET radiation sensor, compatible with standard technology and under development, and are an improved version of a previously developed dosimeter which has less power consumption and sharper transfer characteristics.
3
Gamma radiation effects on bipolar transistors a comparison of surface mount and standard packages
S.L. Pater,R.E. Sharp +1 more
- 18 Sep 1995
TL;DR: In this paper, the gamma radiation total dose effects on unbiased bipolar transistors in both surface mount and standard packages have been assessed, at a dose rate of 12.6 kGy[H/sub 2/O]/hr, using a cobalt-60 source.
3
Influence of bias stressing and irradiation on poly-three-hexylthiophene based field effect transistors
TL;DR: In this article, preliminary measurements of positive and negative bias stress and radiation effects in poly-three-hexylthiophene based field effect transistors are reported, showing that bias stress induced positive threshold voltage shift is suppressed when devices are simultaneously irradiated.
3
Sensors based on MIS structures for study of ionization radiations
V. V. Andreev,Gennady G. Bondarenko,D. V. Andreev,Dmitriy M. Akhmelkin +3 more
- 01 Mar 2018
TL;DR: In this paper, an active sensitive element of an irradiation sensor based on metal-insulator-semiconductor structures (MIS structures) has been constructed, which were in the mode of the constant current maintaining.
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