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Ionizing radiation effects in MOS devices and circuits
Tso-Ping Ma,Paul V. Dressendorfer +1 more
- 01 Jan 1989
1.2K
TL;DR: In this article, Hughes et al. present a survey of the effects of radiation on MOS devices and circuits, including hardening technology, process-induced radiation effects, and interface traps.
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Abstract: Historical Perspective (H. Hughes). Electron--Hole Generation, Transport, and Trapping in SiO2 (F. McLean, et al.). Radiation--Induced Interface Traps (P. Winokur). Radiation Effects on MOS Devices and Circuits (P. Dressendorfer). Radiation--Hardening Technology (P. Dressendorfer). Process--Induced Radiation Effects (T. Ma). Source Considerations and Testing Techniques (K. Kerris). Transient--Ionization and Single--Event Phenomena (S. Kerns). Index.
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Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells
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Electrical characteristics of Metal-Resistive layer-Silicon (MRS) avalanche detectors
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Pulse Quenching and Charge-Sharing Effects on Heavy-Ion Microbeam Induced ASET in a Full-Custom CMOS OpAmp
Andres Fontana,Sebastian M. Pazos,Fernando L. Aguirre,Nahuel Vega,Nahuel Muller,Emmanuel De La Fourniere,Fernando Silveira,M.E. Debray,Felix Palumbo +8 more
TL;DR: In this article, charge sharing effects on analog single-event transients are experimentally observed in a fully custom designed, 180-nm complementary metal-oxide-semiconductor (CMOS) operational amplifier by means of a heavy-ion microbeam.