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Ionizing radiation effects in MOS devices and circuits
Tso-Ping Ma,Paul V. Dressendorfer +1 more
- 01 Jan 1989
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TL;DR: In this article, Hughes et al. present a survey of the effects of radiation on MOS devices and circuits, including hardening technology, process-induced radiation effects, and interface traps.
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Abstract: Historical Perspective (H. Hughes). Electron--Hole Generation, Transport, and Trapping in SiO2 (F. McLean, et al.). Radiation--Induced Interface Traps (P. Winokur). Radiation Effects on MOS Devices and Circuits (P. Dressendorfer). Radiation--Hardening Technology (P. Dressendorfer). Process--Induced Radiation Effects (T. Ma). Source Considerations and Testing Techniques (K. Kerris). Transient--Ionization and Single--Event Phenomena (S. Kerns). Index.
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Citations
Total ionizing dose effects on I-V and noise characteristics of MOS transistors in a 0.18 μm CMOS Image Sensor process
Thomas Greig,Konstantin D. Stefanov,Andrew D. Holland,Andrew Clarke,David W. Burt,Jason Gow +5 more
- 01 Sep 2013
TL;DR: In this article, the authors investigated the effects of total ionizing dose (TID) on I-V and noise characteristics of MOS transistors manufactured in a 0.18 μm CMOS Image Sensor (CIS) process.
Experimental study of gamma radiation induced degradation of a piezoresistive pressure sensor
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Effect of irradiation on hydrogen sensors based on MISFET
TL;DR: In this paper, the electron irradiation effect on hydrogen sensors based on metal-insulator-semiconductor transistor (MISFET) with structure Pd-Ta 2 O 5 -SiO 2 -Si was experimentally investigated.
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Plasma radiation dynamics with the upgraded Absolute Extreme Ultraviolet tomographical system in the Tokamak à Configuration Variable.
TL;DR: An upgraded version of a tomographical system which is built up from Absolute Extreme Ultraviolet-type (AXUV) detectors and has been installed on the Tokamak à Configuration Variable (TCV) is introduced, and the coupling between core plasma radiation and plasma-wall interaction is revealed.
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DLTS and in situ C–V analysis of trap parameters in swift 50 MeV Li3+ ion-irradiated Ni/SiO2/Si MOS capacitors
TL;DR: In this paper, high frequency C-V characteristics are studied in situ to estimate the build-up of fixed and oxide charges in Li ion-irradiated devices and the dependence of series resistance, substrate doping and accumulation capacitance on Li ion fluence are clearly explained.
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