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Ionizing radiation effects in MOS devices and circuits
Tso-Ping Ma,Paul V. Dressendorfer +1 more
- 01 Jan 1989
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TL;DR: In this article, Hughes et al. present a survey of the effects of radiation on MOS devices and circuits, including hardening technology, process-induced radiation effects, and interface traps.
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Abstract: Historical Perspective (H. Hughes). Electron--Hole Generation, Transport, and Trapping in SiO2 (F. McLean, et al.). Radiation--Induced Interface Traps (P. Winokur). Radiation Effects on MOS Devices and Circuits (P. Dressendorfer). Radiation--Hardening Technology (P. Dressendorfer). Process--Induced Radiation Effects (T. Ma). Source Considerations and Testing Techniques (K. Kerris). Transient--Ionization and Single--Event Phenomena (S. Kerns). Index.
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Citations
Rad-tolerant flight VLSI from commercial foundries
J.W. Gambes,G.K. Maki +1 more
- 18 Aug 1996
TL;DR: This paper reviews techniques which have been used to protect CMOS circuits from the deleterious effects of the natural space radiation environment.
8
Predicting end-of-life performance of microelectronics in space
TL;DR: In this article, the effects of low dose rates on microelectronics in space are discussed and some of the methods used, especially in ionization effects as they affect MOS devices, are described.
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A New Vertical JFET Power Device for Harsh Radiation Environments
Pablo Fernandez-Martinez,David Flores,Salvador Hidalgo,Xavier Jordà,Xavier Perpiñà,David Quirion,Lucia Ré,Miguel Ullan,Miquel Vellvehi +8 more
TL;DR: In this paper, a vertical junction field effect transistor (JFET) has been designed and fabricated at the IMB-CNM clean room, and several aspects of their design, fabrication and the outcome of their characterization are summarized and discussed in this paper.
Single event effects on CVSL and CMOS exclusive-OR (EX-OR) circuits
Hiroshi Hatano
- 01 Sep 2009
TL;DR: In this paper, single event transient (SET) effects on cascade voltage switch logic (CVSL) exclusive-OR (EX-OR) circuits have been investigated using SPICE.
8
Effect of emitter-base bias during pre-irradiation infrared illumination on the radiation response of bipolar transistors
V.S. Pershenkov,A.Y. Bashin,Gennady I. Zebrev,S.V. Avdeev,Vladimir V. Belyakov,V.N. Ulimov,V.V. Emelianov +6 more
TL;DR: In this article, the effect of pre-irradiation infrared (IR) illumination under reverse and forward emitter-base bias was investigated and shown to decrease during isochronal anneal and almost completely disappears at 100/spl deg/C.
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