Reference Book10.1201/9781482268065
Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
Shuji Nakamura,Shigefusa F. Chichibu +1 more
- 09 Mar 2000
TL;DR: In this paper, theoretical analysis of optical gain spectra of GaN LEDs and InGaN LEDs is presented. And the development and future prospects of InGAN lasers and LEDs are discussed.
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Abstract: 1. Basic Physics and Materials Technology of GaN LEDs and LDs 2. Two. Theoretical Analysis of Optical Gain Spectra 3. Electrical Conductivity Control 4. Crystal Defects and Device Performance in LEDs and LDs 5. Emission Mechanisms and Excitons GaN and InGaN Bulk and QWs 6. Life testing and degradation mechanisms in InGaN LEDs 7. Development and Future Prospects of InGaN lasers and LEDs. Appendix.
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Citations
THE OPTICAL KERR EFFECT IN WURTZITE GaN-BASED DOUBLE QUANTUM WELLS: INFLUENCES OF PIEZOELECTRICITY AND SPONTANEOUS POLARIZATION
TL;DR: In this paper, the nonlinear optical Kerr effect in a nitride semiconductor coupling double quantum well (DQW) has been theoretically investigated by using the compact density matrix approach and iterative treatment.
1
Optical properties of GaN Photonic Crystal Membrane Nanocavities
Yong-Seok Choi,Cedrik Meier,Rajat Sharma,K. Hennessy,Elaine D. Haberer,Y. Gao,Shuji Nakamura,Evelyn L. Hu +7 more
- 30 Aug 2005
TL;DR: L7 photonic-crystal membrane nanocavities with Q factors of 600 have been realized based on the GaN/InGaN material system in this paper, where the authors showed that a L7 nmocavity with high Q factors as high as 5×104 can be achieved.
Optical Characterization of Quaternary AlInGaN Multiquantum Wells
Ya Fen Wu,Jiunn Chyi Lee +1 more
TL;DR: In this article, the influence of QW pairs and barrier width on the optical properties of the samples is investigated by means of temperature and incident-power dependent photoluminescence (PL) measurements.
Optical properties of GaN Photonic Crystal Membrane Nanocavities at Blue Wavelengths
Yong-Seok Choi,Cedrik Meier,Rajat Sharma,K. Hennessy,Elaine D. Haberer,Shuji Nakamura,Evelyn L. Hu +6 more
TL;DR: In this paper, the design parameters for high-Q photonic-crystal (PC) bandgap modes in the emission wavelengths of InGaN/GaN multiple quantum wells were investigated.
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Reliability and degradation of semiconductor lasers and LEDs
Mitsuo Fukuda
- 01 Jan 1991
TL;DR: In this article, the degradation mechanisms and enhancement factors of AIGaAs/GaAs light sources reliability and degradation of InGaAsP/InP surface emitting type LEDs reliability in LEDs and laser diodes degradation of MBE-and MOVPE-grown lasers degradation of bonds and heat sinks degradation modes and lifetime of semiconductor LEDs and lasers
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Gallium nitride and related materials
Fernando Ponce,Russell D. Dupuis,Shuji Nakamura,J. A. Edmond +3 more
- 01 Nov 1996
TL;DR: The first International Symposium on Gallium Nitride and related materials was held on November 27-December 1, 1995, in Boston, Massachusetts, US as mentioned in this paper, which reflected the large amount of work that has taken place since the announcement of commercial blue light emitting devices.
150