Reference Book10.1201/9781482268065
Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
Shuji Nakamura,Shigefusa F. Chichibu +1 more
- 09 Mar 2000
TL;DR: In this paper, theoretical analysis of optical gain spectra of GaN LEDs and InGaN LEDs is presented. And the development and future prospects of InGAN lasers and LEDs are discussed.
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Abstract: 1. Basic Physics and Materials Technology of GaN LEDs and LDs 2. Two. Theoretical Analysis of Optical Gain Spectra 3. Electrical Conductivity Control 4. Crystal Defects and Device Performance in LEDs and LDs 5. Emission Mechanisms and Excitons GaN and InGaN Bulk and QWs 6. Life testing and degradation mechanisms in InGaN LEDs 7. Development and Future Prospects of InGaN lasers and LEDs. Appendix.
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Citations
Optical properties of ZnO-based step quantum wells
A. A. Lotin,Oleg Alexeyevic Novodvorsky,L. S. Parshina,Olga D. Khramova,V. A. Mikhalevsky,E. A. Cherebilo +5 more
TL;DR: In this paper, it has been established that the increase of the barrier height ratio for charge carriers in the conduction and valence bands upon transition from the active ZnO layers in the MgxZn1−xO/ZnO system to the active layers of CdyZn 1−yO in a low-dimensional Mg xZn-1−XO/Cdy Zn 1 −yO system is associated with the fact that the electron concentration in Cdy ZN1−YO films rises with an increase in the
2
Surface-Induced Carrier Localization and Recombination Characteristics in InGaN/GaN Quantum Dots in Nanopillars
Zilan Wang,Zhibiao Hao,Jiadong Yu,Lin-Feng Wang,Jiaxing Wang,Chunyan Sun,Bing Xiong,Yaru Han,Hongtao Li,Yiqi Luo +9 more
TL;DR: In this paper, the photoluminescence properties of InGaN/GaN quantum dots in nanopillar samples were carefully investigated and compared after applying various surface manipulation techniques.
2
•Journal Article
Comparison of Surface Passivation Layers on InGaN/GaN MQW LEDs
Hyuck Soo Yang,Sang Youn Han,M. Hlad,Brent P. Gila,Kwang Hyeon Baik,S. J. Pearton,Soohwan Jang,B. S. Kang,Fan Ren +8 more
TL;DR: In this article, the effect of different surface passivation films on blue or green (465-505 nm) InGaN/GaN multiquantum well light-emitting diodes (LEDs) die were examined.
2
Optical and Electrical Properties of µ-Slice InGaN/GaN Light Emitting Diodes Shaped by Focused Ion Beam Process
Che Kang Hsu,Jinn Kong Sheu,Jia Kuen Wang,Ming-Lun Lee,Kuo Hua Chang,Shang Ju Tu,Wei-Chih Lai +6 more
TL;DR: In this paper, slice-type GaN-based light-emitting diodes (µ-slice LEDs) scaled down to a few micrometers using focused ion beam (FIB) process were demonstrated.
2
References
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Symmetry and Strain-Induced Effects in Semiconductors
Gennadiĭ Levikovich Bir,Grigory E. Pikus +1 more
- 01 Jan 1974
2.6K
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Cathodoluminescence microscopy of inorganic solids
B. G. Yacobi,D. B. Holt +1 more
- 01 Jan 1990
TL;DR: The basic concepts of solid state physics have been discussed in detail in this article, where the authors present a review of the main concepts of Solid State Physics and its applications in the literature.
624
•Book
Reliability and degradation of semiconductor lasers and LEDs
Mitsuo Fukuda
- 01 Jan 1991
TL;DR: In this article, the degradation mechanisms and enhancement factors of AIGaAs/GaAs light sources reliability and degradation of InGaAsP/InP surface emitting type LEDs reliability in LEDs and laser diodes degradation of MBE-and MOVPE-grown lasers degradation of bonds and heat sinks degradation modes and lifetime of semiconductor LEDs and lasers
388
Gallium nitride and related materials
Fernando Ponce,Russell D. Dupuis,Shuji Nakamura,J. A. Edmond +3 more
- 01 Nov 1996
TL;DR: The first International Symposium on Gallium Nitride and related materials was held on November 27-December 1, 1995, in Boston, Massachusetts, US as mentioned in this paper, which reflected the large amount of work that has taken place since the announcement of commercial blue light emitting devices.
150