Reference Book10.1201/9781482268065
Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
Shuji Nakamura,Shigefusa F. Chichibu +1 more
- 09 Mar 2000
TL;DR: In this paper, theoretical analysis of optical gain spectra of GaN LEDs and InGaN LEDs is presented. And the development and future prospects of InGAN lasers and LEDs are discussed.
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Abstract: 1. Basic Physics and Materials Technology of GaN LEDs and LDs 2. Two. Theoretical Analysis of Optical Gain Spectra 3. Electrical Conductivity Control 4. Crystal Defects and Device Performance in LEDs and LDs 5. Emission Mechanisms and Excitons GaN and InGaN Bulk and QWs 6. Life testing and degradation mechanisms in InGaN LEDs 7. Development and Future Prospects of InGaN lasers and LEDs. Appendix.
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Citations
Polarity dependent strongly inhomogeneous In-incorporation in GaN nanocolumns.
C I Oppo,J. Malindretos,Reza R. Zamani,D. Broxtermann,J. Segura-Ruiz,Gema Martínez-Criado,Pier Carlo Ricci,A. Rizzi +7 more
TL;DR: In this work, GaN/InGaN/GaN nanocolumns (NCs) have been grown by molecular beam epitaxy and Selective area growth (SAG) and self-organized growth (SOG) were performed simultaneously in patterned and unpatterned regions of the same substrate, respectively.
7
The In compositional gradation effect on photoluminescence in InGaN/GaN multi-quantum-well structures
TL;DR: In this article, various shapes of InGaN/GaN multi-quantum-well structures were grown by metal-organic chemical vapour deposition in order to investigate the compositional gradation effect on photoluminescence in the vicinity of the active quantum well region.
7
MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain
TL;DR: In this article, the structure of epilayer-substrate interface was investigated by transmission electron microscopy (TEM) using columnar structured LT GaN and HT GaN with good crystallinity.
7
Surface-plasmon-enhanced light transmission intensity with a basic grating in GaN-based LED
Li Linqing,Lu Yanwu +1 more
TL;DR: In this article, a basic grating structure model was proposed to enhance light intensity in GaN material, which was simpler and cheaper than the traditional metal film grating, and calculated and analyzed the structure with different parameters, and studied the numerical simulation results of Ag-films/Al-Films/Aufilms.
7
Space charge effects, carrier capture transient behaviour and α particle detection in semi-insulating GaN
J. Vaitkus,Eugenijus Gaubas,T. Shirahama,Shiro Sakai,Tao Wang,Kevin M. Smith,W. R. Cunningham +6 more
TL;DR: In this paper, the electrical properties of a semi-insulating GaN epitaxial layer have been investigated and regimes of space charge and Ohmic currents found, and some promising data demonstrating the application of this SI-GaN for the detection of ionising particles, specifically α particles, is presented.
7
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Mitsuo Fukuda
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Gallium nitride and related materials
Fernando Ponce,Russell D. Dupuis,Shuji Nakamura,J. A. Edmond +3 more
- 01 Nov 1996
TL;DR: The first International Symposium on Gallium Nitride and related materials was held on November 27-December 1, 1995, in Boston, Massachusetts, US as mentioned in this paper, which reflected the large amount of work that has taken place since the announcement of commercial blue light emitting devices.
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