Reference Book10.1201/9781482268065
Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
Shuji Nakamura,Shigefusa F. Chichibu +1 more
- 09 Mar 2000
TL;DR: In this paper, theoretical analysis of optical gain spectra of GaN LEDs and InGaN LEDs is presented. And the development and future prospects of InGAN lasers and LEDs are discussed.
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Abstract: 1. Basic Physics and Materials Technology of GaN LEDs and LDs 2. Two. Theoretical Analysis of Optical Gain Spectra 3. Electrical Conductivity Control 4. Crystal Defects and Device Performance in LEDs and LDs 5. Emission Mechanisms and Excitons GaN and InGaN Bulk and QWs 6. Life testing and degradation mechanisms in InGaN LEDs 7. Development and Future Prospects of InGaN lasers and LEDs. Appendix.
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Citations
Effects of proton irradiation on the magnetic properties of GaGdN and GaCrN
Jennifer K. Hite,K. K. Allums,G. T. Thaler,Cammy R. Abernathy,Stephen J. Pearton,R M Frazier,R. Dwivedi,Richard Wilkins,J. M. Zavada +8 more
TL;DR: In this paper, GaGdN and GaCrN were irradiated with high energy (10 and 40 MeV) protons at a fluence of 5? 109 cm?2 to examine the effect on magnetization.
7
Carrier Concentration and Junction Temperature Dependencies of Illumination Efficiency of GaN Power Light-Emitting Diodes
Michael P. Liao
- 06 May 2007
TL;DR: In this article, the effects of junction temperature and carrier concentration on current-induced efficiency degradation of GaN power LEDs were investigated and the effect of carrier concentration and junction temperature dependencies of illumination efficiency were presented.
7
Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods
Guogang Zhang,Zhe Zhuang,Xu Guo,Fang-Fang Ren,Fang-Fang Ren,Bin Liu,Haixiong Ge,Zili Xie,Ling Sun,Ting Zhi,Tao Tao,Yi Li,Youdou Zheng,Rong Zhang +13 more
TL;DR: InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods were fabricated by using soft ultraviolet nanoimprint lithography, providing a progressive view on the effective energy transfer between MQWs and surface plasmons.
An orthogonal surface phase in semipolar GaN∕r-plane sapphire
TL;DR: In this paper, structural characterization on semipolar GaN films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy is reported. And an anomalous phase orthogonal-twisted around the c-axis is revealed by transmission electron microscope, which is almost localized at the surface.
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•Dissertation
Modelling the optical and electronic transport properties of AlGaAs and AlGaN intersubband devices and optimisation of quantum cascade laser active regions
Andrew Grier
- 01 Aug 2015
TL;DR: In this article, a density matrix model is used to predict the electron distribution, gain, and current density in an arbitrary QCL active region, and the model is validated with a comparison to rate equation, non-equilibrium Green's function, and experimental data for AlGaAs/GaAs QCLs.
7
References
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Symmetry and Strain-Induced Effects in Semiconductors
Gennadiĭ Levikovich Bir,Grigory E. Pikus +1 more
- 01 Jan 1974
2.6K
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Cathodoluminescence microscopy of inorganic solids
B. G. Yacobi,D. B. Holt +1 more
- 01 Jan 1990
TL;DR: The basic concepts of solid state physics have been discussed in detail in this article, where the authors present a review of the main concepts of Solid State Physics and its applications in the literature.
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•Book
Reliability and degradation of semiconductor lasers and LEDs
Mitsuo Fukuda
- 01 Jan 1991
TL;DR: In this article, the degradation mechanisms and enhancement factors of AIGaAs/GaAs light sources reliability and degradation of InGaAsP/InP surface emitting type LEDs reliability in LEDs and laser diodes degradation of MBE-and MOVPE-grown lasers degradation of bonds and heat sinks degradation modes and lifetime of semiconductor LEDs and lasers
388
Gallium nitride and related materials
Fernando Ponce,Russell D. Dupuis,Shuji Nakamura,J. A. Edmond +3 more
- 01 Nov 1996
TL;DR: The first International Symposium on Gallium Nitride and related materials was held on November 27-December 1, 1995, in Boston, Massachusetts, US as mentioned in this paper, which reflected the large amount of work that has taken place since the announcement of commercial blue light emitting devices.
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