Reference Book10.1201/9781482268065
Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
Shuji Nakamura,Shigefusa F. Chichibu +1 more
- 09 Mar 2000
TL;DR: In this paper, theoretical analysis of optical gain spectra of GaN LEDs and InGaN LEDs is presented. And the development and future prospects of InGAN lasers and LEDs are discussed.
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Abstract: 1. Basic Physics and Materials Technology of GaN LEDs and LDs 2. Two. Theoretical Analysis of Optical Gain Spectra 3. Electrical Conductivity Control 4. Crystal Defects and Device Performance in LEDs and LDs 5. Emission Mechanisms and Excitons GaN and InGaN Bulk and QWs 6. Life testing and degradation mechanisms in InGaN LEDs 7. Development and Future Prospects of InGaN lasers and LEDs. Appendix.
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Citations
Atomistic analysis of the electronic structure of m-plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations
Daniel S. P. Tanner,Daniel S. P. Tanner,Miguel A. Caro,Eoin P. O'Reilly,Eoin P. O'Reilly,Stefan Schulz +5 more
TL;DR: In this paper, a detailed atomistic analysis of the electronic properties of m-plane InGaN/GaN quantum wells is presented, where local variation in strain and built-in potential arising from random alloy fluctuations are explicitly included in the model and many energy states of the supercells considered are calculated to determine the impact of the alloy fluctuations on the electronic structure of the system under investigation.
8
Dispersive spectra and Fröhlich electron–phonon interaction Hamiltonians of full polar optical phonon states in a wurtzite nitride nanowire: quantum size effect
TL;DR: In this paper, the dispersive features of the four types of phonon modes are analyzed and the behavior of the propagating (PR) modes reducing to the corresponding HS modes is observed clearly in the dispersion curves of these modes, which reveals that the present theories of PHON modes are self-consistency and correct for the description of PHONS in wurtzite Q1D rectangular nanowire (NW) structure.
8
Correlation of crystalline and optical properties with UV photodetector characteristics of GaN grown by laser molecular beam epitaxy on a-sapphire
V. Aggarwal,Ch. Ramesh,Urvashi Varshney,Prashant Tyagi,S. Gautam,Amit Kumar Mauraya,Brajesh S. Yadav,Gaurav Gupta,Ramakrishnan Ganesan,P. Senthil Kumar,Sunil Singh Kushvaha +10 more
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External electric and magnetic field effects on the polaron in a wurtzite nitride nanowire embedded in a nonpolar matrix
TL;DR: In this article, the Frohlich polaron problem in wurtzite nitride cylindrical nanowire embedded in a nonpolar matrix within the framework of the Lee-Low-Pines variational approach was investigated.
8
Influence of high temperature AlN buffer on optical gain in AlGaN/AlGaN multiple quantum well structures
TL;DR: In this article, the authors performed standard stripe-length dependent optical-pumping measurements on AlGaN/AlGaN multiple quantum wells (MQWs) on an AlN buffer grown using two different kinds of technologies, i.e., GaN interlayer and porous buffer, and obtained the net modal gains of the two samples along both m- and a-axis.
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Reliability and degradation of semiconductor lasers and LEDs
Mitsuo Fukuda
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TL;DR: In this article, the degradation mechanisms and enhancement factors of AIGaAs/GaAs light sources reliability and degradation of InGaAsP/InP surface emitting type LEDs reliability in LEDs and laser diodes degradation of MBE-and MOVPE-grown lasers degradation of bonds and heat sinks degradation modes and lifetime of semiconductor LEDs and lasers
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Gallium nitride and related materials
Fernando Ponce,Russell D. Dupuis,Shuji Nakamura,J. A. Edmond +3 more
- 01 Nov 1996
TL;DR: The first International Symposium on Gallium Nitride and related materials was held on November 27-December 1, 1995, in Boston, Massachusetts, US as mentioned in this paper, which reflected the large amount of work that has taken place since the announcement of commercial blue light emitting devices.
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