Reference Book10.1201/9781482268065
Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
Shuji Nakamura,Shigefusa F. Chichibu +1 more
- 09 Mar 2000
TL;DR: In this paper, theoretical analysis of optical gain spectra of GaN LEDs and InGaN LEDs is presented. And the development and future prospects of InGAN lasers and LEDs are discussed.
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Abstract: 1. Basic Physics and Materials Technology of GaN LEDs and LDs 2. Two. Theoretical Analysis of Optical Gain Spectra 3. Electrical Conductivity Control 4. Crystal Defects and Device Performance in LEDs and LDs 5. Emission Mechanisms and Excitons GaN and InGaN Bulk and QWs 6. Life testing and degradation mechanisms in InGaN LEDs 7. Development and Future Prospects of InGaN lasers and LEDs. Appendix.
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Citations
Bandgap engineering in MBE grown Al1?xGaxN epitaxial columnar nanostructures
TL;DR: In this paper, Al1−xGaxN (x = 0.6, 0.8 and 0.9) were fabricated on Si and sapphire substrates with AlN buffer layer using a plasma assisted molecular beam epitaxy (MBE) under different growth conditions.
10
Photoluminescence of InGaN/GaN quantum wells grown on c‐plane substrates with locally variable miscut
Piotr A. Dróżdż,Piotr A. Dróżdż,Krzysztof P. Korona,Marcin Sarzyński,Tadeusz Suski,Robert Czernecki,Dariusz Wasik +6 more
TL;DR: In this article, the growth plane is tilted with respect to the c lattice plane (0001) to investigate the miscut influence on grown layers, patterned GaN substrates with separate regions tilted between 0.34° and 0.97° to the C-plane were used to grow multiquantum well InGaN/GaN structures by metalorganic vapor phase epitaxy.
10
Impurity bound polaron in wurtzite GaN/AlN quantum wells: The interface optical-phonon and the built-in electric field effects
TL;DR: In this paper, the ionization energy of a bound polaron in wurtzite GaN/AlN strained quantum wells was investigated theoretically by means of a modified Lee-Low-Pines variational approach.
9
Secondary ion mass spectrometry of dopant and impurity elements in wide bandgap semiconductors
R.G. Wilson,J.M. Zavada +1 more
TL;DR: Based on secondary ion mass spectrometry (SIMS) measurements, this paper compiled state-of-the-art data concerning dopant elements and natural impurities in the wide bandgap semiconductor materials diamond, SiC, ZnSe, GaN and AlN.
9
Interband and intersubband optical transition energies in a Ga0.7In0.3N/GaN quantum dot
TL;DR: In this article, the binding energies of a hydrogenic donor impurity and an exciton are investigated in a Ga0.7In0.3N/GaN parabolic quantum dot taking into consideration of spatial confinement effects and the magnetic and electric fields.
9
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B. G. Yacobi,D. B. Holt +1 more
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TL;DR: The basic concepts of solid state physics have been discussed in detail in this article, where the authors present a review of the main concepts of Solid State Physics and its applications in the literature.
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Reliability and degradation of semiconductor lasers and LEDs
Mitsuo Fukuda
- 01 Jan 1991
TL;DR: In this article, the degradation mechanisms and enhancement factors of AIGaAs/GaAs light sources reliability and degradation of InGaAsP/InP surface emitting type LEDs reliability in LEDs and laser diodes degradation of MBE-and MOVPE-grown lasers degradation of bonds and heat sinks degradation modes and lifetime of semiconductor LEDs and lasers
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Gallium nitride and related materials
Fernando Ponce,Russell D. Dupuis,Shuji Nakamura,J. A. Edmond +3 more
- 01 Nov 1996
TL;DR: The first International Symposium on Gallium Nitride and related materials was held on November 27-December 1, 1995, in Boston, Massachusetts, US as mentioned in this paper, which reflected the large amount of work that has taken place since the announcement of commercial blue light emitting devices.
150