Reference Book10.1201/9781482268065
Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
Shuji Nakamura,Shigefusa F. Chichibu +1 more
- 09 Mar 2000
TL;DR: In this paper, theoretical analysis of optical gain spectra of GaN LEDs and InGaN LEDs is presented. And the development and future prospects of InGAN lasers and LEDs are discussed.
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Abstract: 1. Basic Physics and Materials Technology of GaN LEDs and LDs 2. Two. Theoretical Analysis of Optical Gain Spectra 3. Electrical Conductivity Control 4. Crystal Defects and Device Performance in LEDs and LDs 5. Emission Mechanisms and Excitons GaN and InGaN Bulk and QWs 6. Life testing and degradation mechanisms in InGaN LEDs 7. Development and Future Prospects of InGaN lasers and LEDs. Appendix.
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Citations
Impurity-related binding energy in strained (In,Ga)N asymmetric coupled QWs under strong built-in electric field
Haddou El Ghazi,A. John Peter +1 more
TL;DR: In this paper, the shallow-donor ground-state binding energy of wurtzite strained (In,Ga)N asymmetric coupled quantum wells (ACQW) is calculated.
15
Electric field effect on the donor impurity states in zinc-blende symmetric InGaN/GaN coupled quantum dots
TL;DR: In this article, the donor binding energy in a cylindrical zinc-blende (ZB) symmetric InGaN/GaN coupled quantum dots (QDs) is investigated variationally in the presence of an applied electric field.
15
Hydrogenic impurity states in zinc-blende GaN/AlN coupled quantum dots
Congxin Xia,Yaming Liu,Shuyi Wei +2 more
TL;DR: In this article, the donor binding energy of a hydrogenic impurity in zinc-blende (ZB) GaN/AlN coupled quantum dots (QDs) using a variational method was calculated.
15
Highly Reflective GaN-Based Air-Gap Distributed Bragg Reflectors Fabricated Using AlInN Wet Etching
TL;DR: In this article, a four-period GaN-based air-gap distributed Bragg reflectors (DBRs) using wet etching of sacrificial AlInN layers is presented.
15
Light emission from several-atom In-N clusters in wurtzite Ga-rich InGaN alloys and InGaN/GaN strained quantum wells
TL;DR: In order to understand the mechanism of light emission and to seek the special In-related crystal microstructures associated with the elusive electron localization centers, Wang et al. as discussed by the authors considered four representative In configurations (uniform, small In-N clusters, short In -N chains, and a combination of clusters and chains) in wurtzite Ga-rich In x Ga 1− x N alloys and In X Ga 1 − x N/GaN strained quantum wells (QWs), respectively, and investigated their electronic structures using powerful first-principles calculations.
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Reliability and degradation of semiconductor lasers and LEDs
Mitsuo Fukuda
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TL;DR: In this article, the degradation mechanisms and enhancement factors of AIGaAs/GaAs light sources reliability and degradation of InGaAsP/InP surface emitting type LEDs reliability in LEDs and laser diodes degradation of MBE-and MOVPE-grown lasers degradation of bonds and heat sinks degradation modes and lifetime of semiconductor LEDs and lasers
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Gallium nitride and related materials
Fernando Ponce,Russell D. Dupuis,Shuji Nakamura,J. A. Edmond +3 more
- 01 Nov 1996
TL;DR: The first International Symposium on Gallium Nitride and related materials was held on November 27-December 1, 1995, in Boston, Massachusetts, US as mentioned in this paper, which reflected the large amount of work that has taken place since the announcement of commercial blue light emitting devices.
150