Reference Book10.1201/9781482268065
Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
Shuji Nakamura,Shigefusa F. Chichibu +1 more
- 09 Mar 2000
TL;DR: In this paper, theoretical analysis of optical gain spectra of GaN LEDs and InGaN LEDs is presented. And the development and future prospects of InGAN lasers and LEDs are discussed.
read more
Abstract: 1. Basic Physics and Materials Technology of GaN LEDs and LDs 2. Two. Theoretical Analysis of Optical Gain Spectra 3. Electrical Conductivity Control 4. Crystal Defects and Device Performance in LEDs and LDs 5. Emission Mechanisms and Excitons GaN and InGaN Bulk and QWs 6. Life testing and degradation mechanisms in InGaN LEDs 7. Development and Future Prospects of InGaN lasers and LEDs. Appendix.
read more
Chat with Paper
AI Agents for this Paper
Find similar papers on Google Scholar, PubMed and Arxiv
Write a critical review of this paper
Analyze citations of this paper to find unaddressed research gaps
Citations
Large misorientation of GaN films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy
TL;DR: The lattice orientation of epitaxial GaN films grown on r -plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy was investigated in this paper, where high-resolution X-ray diffraction revealed the large misorientation of GaN when the growth temperature was increased from 1100°C to 1150°C.
15
Nonuniformity of carrier injection and the degradation of blue LEDs
TL;DR: In this paper, the distribution of electroluminescence (EL) intensity over the area and in the course of time before and after the optical degradation of blue InGaN/GaN LEDs is studied.
15
Analysis of growth rate and crystal quality of AlN epilayers by flow-modulated metal organic chemical vapor deposition
TL;DR: Wang et al. as mentioned in this paper analyzed the relationship between flow-modulated modes and growth rate, and then proposed two kinds of flow modulated modes to increase the growth rate of AlN.
15
Sunlike White Light-Emitting Diodes Based on Rare-Earth-Free Luminescent Materials
TL;DR: In this paper , a rare-earth-free white light-emitting diodes (WLEDs) with a combination of high color rendering index (CRI) and high deep-red color rendering R9 is presented.
Mid-infrared electro-luminescence and absorption from AlGaN/GaN-based multi-quantum well inter-subband structures
TL;DR: In this article, the authors present electro-modulated absorption and electro-luminescence measurements on chirped AlGaN/GaN-based multi-quantum well inter-subband structures grown by metal-organic vapour phase epitaxy.
15
References
•Book
Symmetry and Strain-Induced Effects in Semiconductors
Gennadiĭ Levikovich Bir,Grigory E. Pikus +1 more
- 01 Jan 1974
2.6K
•Book
Cathodoluminescence microscopy of inorganic solids
B. G. Yacobi,D. B. Holt +1 more
- 01 Jan 1990
TL;DR: The basic concepts of solid state physics have been discussed in detail in this article, where the authors present a review of the main concepts of Solid State Physics and its applications in the literature.
624
•Book
Reliability and degradation of semiconductor lasers and LEDs
Mitsuo Fukuda
- 01 Jan 1991
TL;DR: In this article, the degradation mechanisms and enhancement factors of AIGaAs/GaAs light sources reliability and degradation of InGaAsP/InP surface emitting type LEDs reliability in LEDs and laser diodes degradation of MBE-and MOVPE-grown lasers degradation of bonds and heat sinks degradation modes and lifetime of semiconductor LEDs and lasers
388
Gallium nitride and related materials
Fernando Ponce,Russell D. Dupuis,Shuji Nakamura,J. A. Edmond +3 more
- 01 Nov 1996
TL;DR: The first International Symposium on Gallium Nitride and related materials was held on November 27-December 1, 1995, in Boston, Massachusetts, US as mentioned in this paper, which reflected the large amount of work that has taken place since the announcement of commercial blue light emitting devices.
150