Reference Book10.1201/9781482268065
Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
Shuji Nakamura,Shigefusa F. Chichibu +1 more
- 09 Mar 2000
TL;DR: In this paper, theoretical analysis of optical gain spectra of GaN LEDs and InGaN LEDs is presented. And the development and future prospects of InGAN lasers and LEDs are discussed.
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Abstract: 1. Basic Physics and Materials Technology of GaN LEDs and LDs 2. Two. Theoretical Analysis of Optical Gain Spectra 3. Electrical Conductivity Control 4. Crystal Defects and Device Performance in LEDs and LDs 5. Emission Mechanisms and Excitons GaN and InGaN Bulk and QWs 6. Life testing and degradation mechanisms in InGaN LEDs 7. Development and Future Prospects of InGaN lasers and LEDs. Appendix.
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Citations
Sub-250 nm light emission and optical gain in AlGaN materials
Emanuele Francesco Pecora,Wei Zhang,A. Yu. Nikiforov,Jian Yin,Roberto Paiella,Luca Dal Negro,Theodore D. Moustakas +6 more
TL;DR: In this paper, the authors investigated the deep-UV optical emission and gain properties of AlxGa1−xN/AlyGa 1−yN multiple quantum wells structures.
29
Quantum Confined Laser Devices
P. Blood
- 01 Oct 2015
TL;DR: Quantum Confined Laser Devices book explores the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots. It covers laser diode structure, operation, gain, recombination, and laser action.
29
Practical Surface Treatments and Surface Chemistry of n -Type and p -Type GaN
TL;DR: In this article, X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to study the electronic structure of n-GaNs and p-GaN(0001) surfaces after three ex situ surface treatments.
29
Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes
TL;DR: In this article, the influence of carrier overflow on the forwardvoltage characteristics of the InGaN-based blue light-emitting-diode (LED) was investigated by comparing the temperature-dependent characteristics of electroluminescence (EL) efficiency, the EL spectra, and the currentvoltage relation over a wide range of temperature (50 − 300
29
Exciton states and interband optical transitions in InGaN quantum dots
TL;DR: In this article, the relationship between exciton states and the height of In x Ga 1− x N QDs is studied and a comparison of the calculated and measured emission wavelengths is given and a good agreement is obtained.
29
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Gallium nitride and related materials
Fernando Ponce,Russell D. Dupuis,Shuji Nakamura,J. A. Edmond +3 more
- 01 Nov 1996
TL;DR: The first International Symposium on Gallium Nitride and related materials was held on November 27-December 1, 1995, in Boston, Massachusetts, US as mentioned in this paper, which reflected the large amount of work that has taken place since the announcement of commercial blue light emitting devices.
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