Reference Book10.1201/9781482268065
Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
Shuji Nakamura,Shigefusa F. Chichibu +1 more
- 09 Mar 2000
TL;DR: In this paper, theoretical analysis of optical gain spectra of GaN LEDs and InGaN LEDs is presented. And the development and future prospects of InGAN lasers and LEDs are discussed.
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Abstract: 1. Basic Physics and Materials Technology of GaN LEDs and LDs 2. Two. Theoretical Analysis of Optical Gain Spectra 3. Electrical Conductivity Control 4. Crystal Defects and Device Performance in LEDs and LDs 5. Emission Mechanisms and Excitons GaN and InGaN Bulk and QWs 6. Life testing and degradation mechanisms in InGaN LEDs 7. Development and Future Prospects of InGaN lasers and LEDs. Appendix.
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Citations
GaN-based PIN alpha particle detectors
TL;DR: In this article, the electrical properties of GaN-based PIN alpha particle detectors have been investigated, such as current voltage and capacitance voltage, and the reverse current of all detectors is in nA range applied at 30-V, which is suitable for detector operation.
31
Effect of inductively coupled plasma damage on performance of GaN–InGaN multiquantum-well light-emitting diodes
TL;DR: In this paper, a GaN multiquantum-well light-emitting diodes (LEDs) in the form of unpackaged die with emission wavelengths from 420to505nm were exposed to either Ar or H2 inductively coupled plasmas as a function of both rf chuck power (controlling incident ion energy) and source power(controlling ion flux).
31
Effect of external tensile stress on blue InGaN/GaN multi-quantum-well light-emitting diodes
Wael Z. Tawfik,Wael Z. Tawfik,Juhui Song,Jung Ju Lee,Jun Seok Ha,Sang-Wan Ryu,Hee Seok Choi,Bengso Ryu,June Key Lee +8 more
TL;DR: In this paper, the influence of external tensile stress on blue InGaN/GaN multi-quantum-well (MQW) light-emitting diodes (LEDs) is demonstrated.
31
Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells
Zilan Wang,Lai Wang,Yuchen Xing,Di Yang,Jiadong Yu,Zhibiao Hao,Changzheng Sun,Bing Xiong,Yanjun Han,Jing Wang,Hongtao Li,Yi Luo +11 more
TL;DR: In this paper, the thermal evolution of carriers' decay process is examined by spectroscopic approaches in high-efficiency InGaN/GaN multiple quantum well (MQW) samples.
31
Characteristics Comparison between GaN Epilayers Grown on Patterned and Unpatterned Sapphire Substrate (0001)
Jae Chul Song,D.H. Kang,Byung Young Shim,Eun A. Ko,Dong Wook Kim,Kannappan Santhakumar,Cheul Ro Lee +6 more
TL;DR: In this paper, the quality of the grown GaN epilayers on the PSS and UPSS were compared using double crystal X-ray diffraction (DCXRD), AFM, scanning electron microscopy (SEM), and photoluminescence (PL).
31
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Reliability and degradation of semiconductor lasers and LEDs
Mitsuo Fukuda
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TL;DR: In this article, the degradation mechanisms and enhancement factors of AIGaAs/GaAs light sources reliability and degradation of InGaAsP/InP surface emitting type LEDs reliability in LEDs and laser diodes degradation of MBE-and MOVPE-grown lasers degradation of bonds and heat sinks degradation modes and lifetime of semiconductor LEDs and lasers
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Gallium nitride and related materials
Fernando Ponce,Russell D. Dupuis,Shuji Nakamura,J. A. Edmond +3 more
- 01 Nov 1996
TL;DR: The first International Symposium on Gallium Nitride and related materials was held on November 27-December 1, 1995, in Boston, Massachusetts, US as mentioned in this paper, which reflected the large amount of work that has taken place since the announcement of commercial blue light emitting devices.
150