Open Access10.11203/JAR.19.177
International Technology Roadmap for Semiconductors 2003の要求清浄度について - シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について -
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About: The article was published on 20 Sep 2004. and is currently open access. The article focuses on the topics: Cleanroom & Atmosphere.
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Citations
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TL;DR: An overview of the state of the art research related to global in nature issues of synchronization and power integrity in 3-D circuits is offered.
Improved properties of MIM capacitors using ALD Al2O3 by multi-temperature technique
Deepak Bharti,Shree Prakash Tiwari +1 more
- 27 Jul 2015
TL;DR: In this paper, a multi-temperature dielectric stack in metal-insulator-metal capacitors is proposed, where the middle layer is deposited at a higher temperature than the top and bottom layers.
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On-chip bus signaling using passive compensation
Yulei Zhang,Ling Zhang,Alina Deutsch,George A. Katopis,Daniel M. Dreps,James F. Buckwalter,Ernest S. Kuh,Chung-Kuan Cheng +7 more
- 18 Nov 2008
TL;DR: A new scheme for bus signaling using on-chip lossy transmission lines with passive compensation is introduced to address the performance limitation brought by the scaling issues of on- chip global wires.
Multi-Voltage Domain Power Distribution Network for Optimized Ultra-Low Voltage Clock Delivery
Shazzad Hossain,Ioannis Savidis +1 more
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TL;DR: The co-designed clock and power networks were resilient to as much as 10% variation in the supply voltage when the proposed multi-voltage domain and distributed power distribution network is used with the optimized clock buffers.
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