Interconnect structure comprising semiconductor material

TL;DR: An interconnect for a semiconductor device, comprising: a first region 304 over a substrate 300, said first region having a first resistivity; a second region 306 over said first Region, said second region having lower resistivity than said firstRegion; and a third region 308 over said second Region,said third Region having a higher resistivities than said secondRegion, is discussed in this article.

Abstract: An interconnect for a semiconductor device, comprising: a first region 304 over a substrate 300, said first region having a first resistivity; a second region 306 over said first region, said second region having a lower resistivity than said first region; and a third region 308 over said second region, said third region having a higher resistivity than said second region. The first region is preferably a layer of polysilicon deposited over a gate oxide layer 302. The second region is a silicide, such as tungsten disilicide, and the third region is preferably polysilicon.