Patent
Integrated circuit resistor structure
Kwang K. Kim
- 04 Jul 1983
1
TL;DR: In this article, a minimal corrosion resistor structure and deposition technique for superconductive circuits, with mutually protective niobium oxide passivation ring, gold corrosion barrier film and titanium resistive layer, is presented.
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Abstract: A minimal corrosion resistor structure and deposition technique for superconductive circuits, with mutually protective niobium oxide passivation ring, gold corrosion barrier film and titanium resistive layer. Niobium has an intrinsic oxide of Nb 2 O 5 , which must be removed from a contact area designated by an opening in photoresist; the development process leaves a photoresist overhang. The gold corrosion barrier film deposition is sharply focused to form an area corresponding to the opening in the photoresist. An unfocused plasma oxidation step, which follows the gold deposition, grows an extrinsic Nb 2 0 5 passivation ring about the gold. The titanium resistive metal is then deposited with a wider focus than that of the gold corrosion barrier film, through the same opening, the titanium resistive metal layer deposits over the edge of the gold, encapsulating the gold with a diffusion barrier.
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Citations
Patent
Capacitor for signal propagation across ground plane boundaries in superconductor integrated circuits
Quentin P. Herr,Lynn A. Abelson,George L. Kerber +2 more
- 12 Nov 2002
TL;DR: In this paper, the self inductance associated with a capacitance A52 in a superconductor integrated circuit (SIC) is reduced by adding a layer of super-conductor metal (A54) overlying the capacitor, effectively producing a negative inductance to counteract the self-inductance of the capacitor leads, thereby reducing inductance of circuit.
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References
Patent
Metallization structure and process for semiconductor devices
Howard E Abraham,George E Bodway,Weldon H Jackson,Sanehiko Kakihana +3 more
- 27 Jun 1973
TL;DR: In this paper, a semiconductor device comprising a resistor formed by a region of a layer of tantalum nitride (Ta.sub.2 N) is described, with the tantalum layer also serving at another region as an adhesion layer and a barrier diffusion layer for the gold contacts and interconnects.
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