Patent
Integratable programmable capacitive device
Kristy A. Campbell
- 06 May 2010
TL;DR: In this paper, a circuit with a capacitive device is described, and the circuit may comprise a first electrode connected to the first conductor and a second electrode being connected to a second conductor.
read more
Abstract: A circuit with a capacitive device is disclosed. The circuit may comprise a capacitive device connected between a first conductor and a second conductor. The capacitive device may comprise a first electrode connected to the first conductor and a second electrode being connected to the second conductor. A chalcogenide layer may be connected to the first electrode and to a metal chalcogenide layer.
read more
Chat with Paper
AI Agents for this Paper
Find similar papers on Google Scholar, PubMed and Arxiv
Write a critical review of this paper
Analyze citations of this paper to find unaddressed research gaps
Citations
Patent
Periphery fill and localized capacitance
Christopher John Kawamura,Derner Scott James +1 more
- 27 Jul 2017
TL;DR: A memory array may be fabricated with certain containers connected to provide capacitance rather than to operate as memory cells as mentioned in this paper, and the capacitance may be used to boost or regulate voltage in, for example, support circuitry.
6
Patent
Variable filter capacitance
Bedeschi Ferdinando,Umberto Di Vincenzo +1 more
- 27 Jun 2018
TL;DR: In this paper, the authors describe a variable filter capacitance (VF) system, where voltages are applied to access lines associated with two voltage sources to increase the capacitance provided by the access lines between the two VMs.
3
References
Patent
Silver-selenide/chalcogenide glass stack for resistance variable memory
Kristy A. Campbell,John T. Moore +1 more
- 14 Feb 2003
TL;DR: In this paper, a resistance variable memory element is provided having at least one silver-selenide layer (18) in between glass layers(17, 20, 21) and a chalcogenide glass, preferably having GexSe100-x composition.
186
Patent
Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
Kristy A. Campbell
- 26 Jun 2003
TL;DR: A method of forming resistance changing elements with improved operational characteristics for use in memory devices and the resulting structures are disclosed in this article, where a chalcogenide glass having the formula (Ge x 1 Se 1−x1 ) 1−y1 Ag y1, wherein 18 ≦x l ≦28, or the formula(Ge x 2 Se l−x2 )1−y2 Ag y2, wherein 39 ≦ex 2 ≦42, and wherein in both the silver is in a concentration which maintains the germanium selenide
167
Patent
Method of forming chalcogenide comprising devices
Kristy A. Campbell,Terry L. Gilton,John T. Moore,Jiutao Li +3 more
- 29 Aug 2001
TL;DR: In this paper, a metal doped chalcogenide comprising material is formed over the first conductive electrode material, and the outer surface is oxidized effective to form a layer comprising at least one of an oxide of the material.
151
Patent
Method of retaining memory state in a programmable conductor RAM
Terry L. Gilton,Kristy A. Campbell +1 more
- 05 Nov 2003
TL;DR: In this paper, a method for retaining stored states in a random access memory device generally comprising the steps of programming a memory cell or an array of memory cells by applying a first voltage to the cells and stabilizing the cells, which is less than the first voltage, is provided.
133
Dual-Mode EPR Detects the Initial Intermediate in Photoassembly of the Photosystem II Mn Cluster: The Influence of Amino Acid Residue 170 of the D1 Polypeptide on Mn Coordination
Kristy A. Campbell,Dee Ann Force,Peter J. Nixon,François Dole,Bruce A. Diner, ,§ and,R. David Britt +5 more
TL;DR: In this paper, the first parallel polarization EPR signal from the Mn(III) ion formed by photooxidation of Mn(II) bound at the high affinity Mn-binding site of photosystem II (PSII) was reported.
129