Journal Article10.1016/S0257-8972(98)00720-8
Influence of deposition parameters on the internal stress in a-C:H films
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TL;DR: In this article, the influence of substrate bias and C 2 H 2 content in the feedgas on the internal stress and structure of a-C:H films was studied and it was found that the hydrogen content and sp 3 /sp 2 ratio decrease with an increase in substrate bias.
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Abstract: Amorphous hydrogenated carbon (a-C:H) films were deposited from a mixture of C 2 H 2 and Ar by the r.f. plasma-enhanced chemical vapor deposition technique. The internal stress was measured by the substrate bending method. The films were characterized by IR and positron annihilation spectroscopies. The influence of substrate bias and C 2 H 2 content in the feedgas on the internal stress and structure were studied. It was found that the hydrogen content and sp 3 /sp 2 ratio decrease with an increase in substrate bias and a decrease in C 2 H 2 content in the feedgas. However, the variations in H content and sp 3 /sp 2 ratio with C 2 H 2 content are much less than that with substrate bias. The void density, which increases monotonically with the increase of C 2 H 2 content, initially decreases and then increases with the increase of substrate bias. The internal stress in a-C:H films decreases with the increase of substrate bias and C 2 H 2 content in the feedgas. The decreases of the H content and sp 3 /sp 2 ratio in the films are the main factors that cause the reduction in internal stress. The void density has a minor effect on the internal stress.
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On the deposition mechanism of a-C:H films by plasma enhanced chemical vapor deposition
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