Journal Article10.1016/S0168-9002(97)00633-5
Influence of contacts and substrate on semi-insulating GaAs detectors
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TL;DR: In this article, the authors show that the leakage current density is primarily determined by the substrate resistivity and not by the Schottky contact parameters, and that the degradation voltage of surface barrier detectors varies between 100 and 270 V for 200 μm thick devices.
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Abstract: It is commonly observed, that semi-insulating GaAs detectors show leakage current densities between 1 and several 100nA/mm2. Also the breakdown voltage of those surface barrier detectors varies between 100 and 270 V for 200 μm thick devices. Moreover, the charge collection efficiency for alpha particles shows a strong correlation with the leakage current density of the detector. The presented measurements show, that the leakage current density is primarily determined by the substrate resistivity and not by the Schottky contact parameters.
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Citations
X-ray imaging using a 320/spl times/240 hybrid GaAs pixel detector
R. Irsigler,J. Andersson,J. Alverbro,J. Borglind,Christer Fröjdh,P. Helander,S. Manolopoulos,H. Martijn,Val O'Shea,Kevin M. Smith +9 more
- 01 Jan 1998
TL;DR: In this paper, the authors presented room temperature measurements on 200 /spl mu/m thick GaAs pixel detectors, which were hybridized to silicon readout circuits for X-ray applications.
37
Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs and the influence of the compensation mechanism on the particle detector performance
M. Rogalla,K. Runge +1 more
TL;DR: In this article, a model for the electric field distribution beneath the Schottky contact in semi-insulating (SI) GaAs particle detectors is developed based on a fieldenhanced electron capture of the EL2-defect.
16
Evaluation of 320×240 pixel LEC GaAs Schottky barrier X-ray imaging arrays, hybridized to CMOS readout circuit based on charge integration
R. Irsigler,J. Andersson,J. Alverbro,J. Borglind,Ch. Fröjdh,P. Helander,S. Manolopoulos,Val O'Shea,Kevin M. Smith +8 more
TL;DR: In this paper, a detector chip was based on semi-insulating LEC GaAs material and had a pitch of 38 μ m. The detector wafers were thinned down prior to the fabrication of the ohmic back contact after dicing, the chips were indium bump, flip-chip bonded to CMOS readout circuits based on charge integration, and finally evaluated.
15
Schottky contacts to high-resistivity epitaxial GaAs layers for detectors of particles and X- or γ-ray photons
TL;DR: In this article, the electrical characteristics of Schottky contacts to epitaxial n-GaAs layers with the charge-carrier concentration <1012 cm−3 for detectors of particles and X- or γ-ray photons are studied.
7
References
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Dieter K. Schroder
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TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
A modified forward I‐V plot for Schottky diodes with high series resistance
TL;DR: In this article, it was shown that a reliable value of the barrier height can be obtained even if there is a series resistance which would hamper the evaluation of the standard lnI•vs•V plot.
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On the Richardson constant of intimate metal-GaAs Schottky barriers
TL;DR: In this article, the temperature coefficient of the barrier height ( alpha ) and the Richardson constant (A**) for Schottky diodes consisting of Au and Cu contacts on GaAs were measured.
40
Evaluation of active layer properties and charge collection efficiency of GaAs particle detectors
J.W. Chen,T. Frömmichen,J. Ludwig,M. Köhler,T. Plötze,M. Rogalla,K. Runge,D.G Ebling,Michael Fiederle,P. Hug +9 more
TL;DR: In this paper, the Schottky barrier leakage current is found to be responsible for the variation of the electrically active deep centers and it therefore influences the charge collection efficiency (c.c.e.).
28
Beam tests of GaAs strip detectors
J.W. Chen,R. Geppert,R. Irsigler,J. Ludwig,J. Pfister,T. Plötze,M. Rogalla,K. Runge,F. Schäfer,Th. Schmid,S. Söldner-Rembold,M. Webel +11 more
TL;DR: In this paper, position dependent measurements of cross-talk between strips and the charge collection efficiency were performed at the 1.5 MeV He + beam of the Freiburg Van de Graaff facility.