Journal Article10.1016/0169-4332(93)90112-O
In situ bulk lifetime measurement on silicon with a chemically passivated surface
T.S. Horányi,T. Pavelka,P. Tüttö +2 more
167
TL;DR: In this article, the authors extended the conventional photoconductive decay lifetime measuring technique for the measurement of bulk lifetime maps on whole silicon wafers by the application of in situ chemical surface passivation.
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About: This article is published in Applied Surface Science. The article was published on 01 Jan 1993. The article focuses on the topics: Carrier lifetime & Silicon.
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Citations
Single Crystal Formamidinium Lead Iodide (FAPbI3): Insight into the Structural, Optical, and Electrical Properties.
Qifeng Han,Sang-Hoon Bae,Pengyu Sun,Yao-Tsung Hsieh,Yang Michael Yang,You Seung Rim,Hongxiang Zhao,Qi Chen,Wangzhou Shi,Gang Li,Yang Yang +10 more
TL;DR: The phase transition of FAPbI3 between the α-phase and δ-phase is studied and photodetectors based on single-crystal FAP bI3 are demonstrated.
875
Surface passivation of crystalline silicon solar cells: a review
TL;DR: A review of surface passivation methods used since the 1970s, both on laboratory-type as well as industrial cells is presented in this paper, where a p-n junction and the subsequent passivation of the resulting silicon surface with plasma silicon nitride are presented.
753
Obtaining a higher Voc in HIT cells
TL;DR: In this article, the surface passivation at the a-Si/c-Si heterointerface realized by Sanyo's successful technologies for fabricating high-quality aSi films and solar cells with low plasma damage processes is investigated.
290
•Book
Loss analysis of crystalline silicon solar cells using photoconductance and quantum efficiency measurements
Bernhard Fischer
- 01 Jan 2003
TL;DR: In this article, the authors reduced the three-dimensional transport in solar cells with periodically arranged rear point contacts to a one-dimensional calculation and derived an approximation for the series resistance.
181
Accurate method for the determination of bulk minority-carrier lifetimes of mono- and multicrystalline silicon wafers
Jan Schmidt,Armin G. Aberle +1 more
TL;DR: In this article, an accurate method for the determination of the bulk minority-carrier recombination lifetime of crystalline silicon wafers of typical thickness (0.5 mm) is presented.
173
References
The electrical characterisation of semiconductors
TL;DR: In this paper, a review of measurement techniques for determining the electrical properties of semiconductors, especially silicon and the III-V compounds, is presented, at a time for continuing innovation in this area, to indicate present trends and material problems which may arise in the near future.
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The study of charge carrier kinetics in semiconductors by microwave conductivity measurements. II.
TL;DR: In this article, the authors investigated the reliability and the possibilities of microwave conductivity measurements, and derived the quantitative relationship between the reflected microwave signal and the change in conductivity for a wafer of singlecrystalline Si.
The passivation of electrically active sites on the surface of crystalline silicon by fluorination
TL;DR: In this paper, a nonoxide surface passivation for crystalline silicon is described, which involves the fluorination of the silicon surface, and it is shown that the fluorinated silicon surface is extraordinarily electrically passive, ≲1010 traps per cm2.
Characterization of silicon wafers by transient microwave photoconductivity measurements
A. Sanders,M. Kunst +1 more
TL;DR: In this paper, the authors used the time resolved microwave (TRMC) method to characterize single crystalline silicon wafers with a contactless, nondestructive transient photoconductivity method.
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.